REFLECTIVE MASK BLANK MANUFACTURING METHOD THEREOF AND REFLECTIVE MASK
본 발명은 반사형 마스크를 제작할 때에 일반적으로 사용되는 고콘트라스트의 레지스트를 이용하면, 후방 산란에 의해서 축적 에너지가 저하하고, CD 선형성이 저하하는 과제를 해결하고자 한다. 본 발명은 기판과, 그 기판 상에 형성된 노광광을 반사하는 다층 반사막과, 그 다층 반사막상에 형성된 노광광을 흡수하는 흡수체막을 갖는 반사형 마스크를 제작하기 위한 반사형 마스크 블랭크로서, 상기 흡수체막 상에 전자선 묘화용 레지스트막이 설치되고, 상기 전자선 묘화용 레지스트막의 콘트라스트값 γ가 30 이하인 것을 특징으로 하는 반사형 마스크 블...
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| creator | TSUKAGOSHI KENTA ONO KAZUNORI HASHIMOTO MASAHIRO FUKUI TOORU |
| description | 본 발명은 반사형 마스크를 제작할 때에 일반적으로 사용되는 고콘트라스트의 레지스트를 이용하면, 후방 산란에 의해서 축적 에너지가 저하하고, CD 선형성이 저하하는 과제를 해결하고자 한다. 본 발명은 기판과, 그 기판 상에 형성된 노광광을 반사하는 다층 반사막과, 그 다층 반사막상에 형성된 노광광을 흡수하는 흡수체막을 갖는 반사형 마스크를 제작하기 위한 반사형 마스크 블랭크로서, 상기 흡수체막 상에 전자선 묘화용 레지스트막이 설치되고, 상기 전자선 묘화용 레지스트막의 콘트라스트값 γ가 30 이하인 것을 특징으로 하는 반사형 마스크 블랭크이다.
To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less. |
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To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180319&DB=EPODOC&CC=KR&NR=20180029096A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180319&DB=EPODOC&CC=KR&NR=20180029096A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUKAGOSHI KENTA</creatorcontrib><creatorcontrib>ONO KAZUNORI</creatorcontrib><creatorcontrib>HASHIMOTO MASAHIRO</creatorcontrib><creatorcontrib>FUKUI TOORU</creatorcontrib><title>REFLECTIVE MASK BLANK MANUFACTURING METHOD THEREOF AND REFLECTIVE MASK</title><description>본 발명은 반사형 마스크를 제작할 때에 일반적으로 사용되는 고콘트라스트의 레지스트를 이용하면, 후방 산란에 의해서 축적 에너지가 저하하고, CD 선형성이 저하하는 과제를 해결하고자 한다. 본 발명은 기판과, 그 기판 상에 형성된 노광광을 반사하는 다층 반사막과, 그 다층 반사막상에 형성된 노광광을 흡수하는 흡수체막을 갖는 반사형 마스크를 제작하기 위한 반사형 마스크 블랭크로서, 상기 흡수체막 상에 전자선 묘화용 레지스트막이 설치되고, 상기 전자선 묘화용 레지스트막의 콘트라스트값 γ가 30 이하인 것을 특징으로 하는 반사형 마스크 블랭크이다.
To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHALcnXzcXUO8QxzVfB1DPZWcPJx9PMGMv1C3RydQ0KDPP3cFXxdQzz8XRRCPFyDXP3dFBz9XBTQtPEwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDQwsDAyNLA0szR2PiVAEAVXAtGg</recordid><startdate>20180319</startdate><enddate>20180319</enddate><creator>TSUKAGOSHI KENTA</creator><creator>ONO KAZUNORI</creator><creator>HASHIMOTO MASAHIRO</creator><creator>FUKUI TOORU</creator><scope>EVB</scope></search><sort><creationdate>20180319</creationdate><title>REFLECTIVE MASK BLANK MANUFACTURING METHOD THEREOF AND REFLECTIVE MASK</title><author>TSUKAGOSHI KENTA ; ONO KAZUNORI ; HASHIMOTO MASAHIRO ; FUKUI TOORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20180029096A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TSUKAGOSHI KENTA</creatorcontrib><creatorcontrib>ONO KAZUNORI</creatorcontrib><creatorcontrib>HASHIMOTO MASAHIRO</creatorcontrib><creatorcontrib>FUKUI TOORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSUKAGOSHI KENTA</au><au>ONO KAZUNORI</au><au>HASHIMOTO MASAHIRO</au><au>FUKUI TOORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>REFLECTIVE MASK BLANK MANUFACTURING METHOD THEREOF AND REFLECTIVE MASK</title><date>2018-03-19</date><risdate>2018</risdate><abstract>본 발명은 반사형 마스크를 제작할 때에 일반적으로 사용되는 고콘트라스트의 레지스트를 이용하면, 후방 산란에 의해서 축적 에너지가 저하하고, CD 선형성이 저하하는 과제를 해결하고자 한다. 본 발명은 기판과, 그 기판 상에 형성된 노광광을 반사하는 다층 반사막과, 그 다층 반사막상에 형성된 노광광을 흡수하는 흡수체막을 갖는 반사형 마스크를 제작하기 위한 반사형 마스크 블랭크로서, 상기 흡수체막 상에 전자선 묘화용 레지스트막이 설치되고, 상기 전자선 묘화용 레지스트막의 콘트라스트값 γ가 30 이하인 것을 특징으로 하는 반사형 마스크 블랭크이다.
To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | REFLECTIVE MASK BLANK MANUFACTURING METHOD THEREOF AND REFLECTIVE MASK |
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