PEALD ALD NITRIDE FILM FORMED BY PLASMA-ENHANCED AND THERMAL ATOMIC LAYER DEPOSITION PROCESS

Provided are methods and apparatus for depositing a nitride film using at least one plasma-enhanced atomic layer deposition (PEALD) cycles and one or more thermal ALD cycles within a single reactor. The number of the thermal ALD cycles may be greater than the number of the PEALD cycles. The integrat...

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Bibliographische Detailangaben

Hauptverfasser:	SIMS JAMES SAMUEL, KELCHNER KATHRYN MERCED
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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