SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device comprising a through hole suitable for a power system circuit part and a method of manufacturing the same are provided. An interlayer insulating film II2 has via holes VH1 and VH2. The sidewall conductive layer SWC is formed along the sidewall of the via hole VH1 and further i...

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Hauptverfasser: KOSHIMIZU MAKOTO, FUKAYA KAZUHIDE, HANAWA TOSHIKAZU
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KOSHIMIZU MAKOTO
FUKAYA KAZUHIDE
HANAWA TOSHIKAZU
description A semiconductor device comprising a through hole suitable for a power system circuit part and a method of manufacturing the same are provided. An interlayer insulating film II2 has via holes VH1 and VH2. The sidewall conductive layer SWC is formed along the sidewall of the via hole VH1 and further includes at least one selected from the group consisting of tungsten, titanium, titanium nitride, tantalum, and molybdenum. A second metal wiring layer M2 fills in the via hole VH1 and contains aluminum. A plug layer PL3 fills in the via hole VH2 and contains at least one selected from the group consisting of tungsten, titanium, titanium nitride, tantalum, and molybdenum. 파워계 회로부에 적합한 관통 구멍 내의 구성을 갖는 반도체 장치 및 그 제조 방법을 제공한다. 층간 절연막 II2는, 비아 홀 VH1, VH2를 갖고 있다. 측벽 도전층 SWC는, 비아 홀 VH1의 측벽면을 따라고 있고, 또한 텅스텐, 티타늄, 질화티타늄, 탄탈륨 및 몰리브덴으로 이루어지는 군에서 선택되는 1종 이상을 포함하고 있다. 제2 금속 배선층 M2는, 비아 홀 VH1 내를 매립하고, 또한 알루미늄을 포함하고 있다. 플러그층 PL3은, 비아 홀 VH2 내를 매립하고, 또한 텅스텐, 티타늄, 질화티타늄, 탄탈륨 및 몰리브덴으로 이루어지는 군에서 선택되는 1종 이상을 포함하고 있다.
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An interlayer insulating film II2 has via holes VH1 and VH2. The sidewall conductive layer SWC is formed along the sidewall of the via hole VH1 and further includes at least one selected from the group consisting of tungsten, titanium, titanium nitride, tantalum, and molybdenum. A second metal wiring layer M2 fills in the via hole VH1 and contains aluminum. A plug layer PL3 fills in the via hole VH2 and contains at least one selected from the group consisting of tungsten, titanium, titanium nitride, tantalum, and molybdenum. 파워계 회로부에 적합한 관통 구멍 내의 구성을 갖는 반도체 장치 및 그 제조 방법을 제공한다. 층간 절연막 II2는, 비아 홀 VH1, VH2를 갖고 있다. 측벽 도전층 SWC는, 비아 홀 VH1의 측벽면을 따라고 있고, 또한 텅스텐, 티타늄, 질화티타늄, 탄탈륨 및 몰리브덴으로 이루어지는 군에서 선택되는 1종 이상을 포함하고 있다. 제2 금속 배선층 M2는, 비아 홀 VH1 내를 매립하고, 또한 알루미늄을 포함하고 있다. 플러그층 PL3은, 비아 홀 VH2 내를 매립하고, 또한 텅스텐, 티타늄, 질화티타늄, 탄탈륨 및 몰리브덴으로 이루어지는 군에서 선택되는 1종 이상을 포함하고 있다.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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