Super Junction Power MOSFETlow-power Super Junction Power MOSFET using the Deep trench

A power MOSFET with a lateral channel structure is disclosed. The power MOSFET includes a P-type substrate; a drain inserted into the substrate; a source inserted into the substrate; an N-type channel formed on the drain and the source; and a gate formed on the N-type channel. The electrical propert...

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Bibliographische Detailangaben
Hauptverfasser:	CHUNG, HUN SUK, KANG, EY GOO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A power MOSFET with a lateral channel structure is disclosed. The power MOSFET includes a P-type substrate; a drain inserted into the substrate; a source inserted into the substrate; an N-type channel formed on the drain and the source; and a gate formed on the N-type channel. The electrical property of the power MOSFET can be improved. P형 기판; 상기 기판에 삽입되어 형성된 드레인; 상기 기판에 삽입되어 형성된 소스; 상기 드레인 및 상기 소스 상이에 형성된 N형 채널; 및 상기 N형 채널 상부에 형성된 게이트를 포함하는 래터널 채널 구조의 파워 모스펫이 개시된다.