ETCHING METHOD METHOD OF MANUFACTURING ARTICLE AND ETCHING SOLUTION
The present invention relates to an etching method capable of anisotropy processing. The etching method according to an embodiment comprises: forming a catalyst layer including a noble metal on a structure including a semiconductor; and immersing the structure in an etching solution containing hydro...
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| creator | ASANO YUSAKU |
| description | The present invention relates to an etching method capable of anisotropy processing. The etching method according to an embodiment comprises: forming a catalyst layer including a noble metal on a structure including a semiconductor; and immersing the structure in an etching solution containing hydrofluoric acid, an oxidizing agent and an organic additive to remove a part of the structure that is in contact with the catalyst layer.
하나의 실시 형태의 에칭 방법은, 반도체를 포함하는 구조물 위에 귀금속을 포함하는 촉매층을 형성하는 것과, 상기 구조물을, 불화 수소산과 산화제와 유기 첨가제를 포함한 에칭액 안에 침지시켜서, 상기 구조물 중 상기 촉매층과 접해 있는 부분을 제거하는 것을 포함한다. |
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하나의 실시 형태의 에칭 방법은, 반도체를 포함하는 구조물 위에 귀금속을 포함하는 촉매층을 형성하는 것과, 상기 구조물을, 불화 수소산과 산화제와 유기 첨가제를 포함한 에칭액 안에 침지시켜서, 상기 구조물 중 상기 촉매층과 접해 있는 부분을 제거하는 것을 포함한다.</description><language>eng ; kor</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171206&DB=EPODOC&CC=KR&NR=20170134292A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171206&DB=EPODOC&CC=KR&NR=20170134292A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASANO YUSAKU</creatorcontrib><title>ETCHING METHOD METHOD OF MANUFACTURING ARTICLE AND ETCHING SOLUTION</title><description>The present invention relates to an etching method capable of anisotropy processing. The etching method according to an embodiment comprises: forming a catalyst layer including a noble metal on a structure including a semiconductor; and immersing the structure in an etching solution containing hydrofluoric acid, an oxidizing agent and an organic additive to remove a part of the structure that is in contact with the catalyst layer.
하나의 실시 형태의 에칭 방법은, 반도체를 포함하는 구조물 위에 귀금속을 포함하는 촉매층을 형성하는 것과, 상기 구조물을, 불화 수소산과 산화제와 유기 첨가제를 포함한 에칭액 안에 침지시켜서, 상기 구조물 중 상기 촉매층과 접해 있는 부분을 제거하는 것을 포함한다.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB2DXH28PRzV_B1DfHwd4FR_m4Kvo5-oW6OziGhQSBpx6AQT2cfVwVHPxcFmJZgf5_QEE9_Px4G1rTEnOJUXijNzaDsBlKjm1qQH59aXJCYnJqXWhLvHWRkYGhuYGhsYmRp5GhMnCoAzXQsRw</recordid><startdate>20171206</startdate><enddate>20171206</enddate><creator>ASANO YUSAKU</creator><scope>EVB</scope></search><sort><creationdate>20171206</creationdate><title>ETCHING METHOD METHOD OF MANUFACTURING ARTICLE AND ETCHING SOLUTION</title><author>ASANO YUSAKU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170134292A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ASANO YUSAKU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASANO YUSAKU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING METHOD METHOD OF MANUFACTURING ARTICLE AND ETCHING SOLUTION</title><date>2017-12-06</date><risdate>2017</risdate><abstract>The present invention relates to an etching method capable of anisotropy processing. The etching method according to an embodiment comprises: forming a catalyst layer including a noble metal on a structure including a semiconductor; and immersing the structure in an etching solution containing hydrofluoric acid, an oxidizing agent and an organic additive to remove a part of the structure that is in contact with the catalyst layer.
하나의 실시 형태의 에칭 방법은, 반도체를 포함하는 구조물 위에 귀금속을 포함하는 촉매층을 형성하는 것과, 상기 구조물을, 불화 수소산과 산화제와 유기 첨가제를 포함한 에칭액 안에 침지시켜서, 상기 구조물 중 상기 촉매층과 접해 있는 부분을 제거하는 것을 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | ETCHING METHOD METHOD OF MANUFACTURING ARTICLE AND ETCHING SOLUTION |
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