Magnetic memory device
A magnetic memory device is provided. The magnetic memory device includes a first reference magnetic layer, a first tunnel barrier layer disposed on the first reference magnetic layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the se...
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| creator | APALKOV DMYTRO VOZNYUK VOLODYMYR KROUNBI MOHAMAD NIKITIN VLADIMIR |
| description | A magnetic memory device is provided. The magnetic memory device includes a first reference magnetic layer, a first tunnel barrier layer disposed on the first reference magnetic layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. At the edge of the free magnetic layer, the magnitude of an in-plane magnetostatic field from the first reference magnetic layer is less than 500 Oe. The magnitude of a fringing field can be reduced.
자기기억장치가 제공된다. 자기기억장치는, 제1 레퍼런스 자기 층(reference magnetic layer), 상기 제1 레퍼런스 자기 층 상에 배치되는 제1 터널 배리어 층(tunnel barrier layer), 제2 터널 배리어 층 및 상기 제1 터널 배리어 층과 상기 제2 터널 배리어 층 사이에 배치되는 자유 자기 층(free magnetic layer)을 포함하고, 상기 자유 자기 층의 에지(edge)에서, 상기 제1 레퍼런스 자기 층으로부터의 정자기장(in-plane magnetostatic field)의 크기는, 500Oe 보다 작다. |
| format | Patent |
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자기기억장치가 제공된다. 자기기억장치는, 제1 레퍼런스 자기 층(reference magnetic layer), 상기 제1 레퍼런스 자기 층 상에 배치되는 제1 터널 배리어 층(tunnel barrier layer), 제2 터널 배리어 층 및 상기 제1 터널 배리어 층과 상기 제2 터널 배리어 층 사이에 배치되는 자유 자기 층(free magnetic layer)을 포함하고, 상기 자유 자기 층의 에지(edge)에서, 상기 제1 레퍼런스 자기 층으로부터의 정자기장(in-plane magnetostatic field)의 크기는, 500Oe 보다 작다.</description><language>eng ; kor</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171204&DB=EPODOC&CC=KR&NR=20170132646A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20171204&DB=EPODOC&CC=KR&NR=20170132646A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>APALKOV DMYTRO</creatorcontrib><creatorcontrib>VOZNYUK VOLODYMYR</creatorcontrib><creatorcontrib>KROUNBI MOHAMAD</creatorcontrib><creatorcontrib>NIKITIN VLADIMIR</creatorcontrib><title>Magnetic memory device</title><description>A magnetic memory device is provided. The magnetic memory device includes a first reference magnetic layer, a first tunnel barrier layer disposed on the first reference magnetic layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. At the edge of the free magnetic layer, the magnitude of an in-plane magnetostatic field from the first reference magnetic layer is less than 500 Oe. The magnitude of a fringing field can be reduced.
자기기억장치가 제공된다. 자기기억장치는, 제1 레퍼런스 자기 층(reference magnetic layer), 상기 제1 레퍼런스 자기 층 상에 배치되는 제1 터널 배리어 층(tunnel barrier layer), 제2 터널 배리어 층 및 상기 제1 터널 배리어 층과 상기 제2 터널 배리어 층 사이에 배치되는 자유 자기 층(free magnetic layer)을 포함하고, 상기 자유 자기 층의 에지(edge)에서, 상기 제1 레퍼런스 자기 층으로부터의 정자기장(in-plane magnetostatic field)의 크기는, 500Oe 보다 작다.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDzTUzPSy3JTFbITc3NL6pUSEkty0xO5WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpQF3x3kFGBobmBobGRmYmZo7GxKkCABwBIko</recordid><startdate>20171204</startdate><enddate>20171204</enddate><creator>APALKOV DMYTRO</creator><creator>VOZNYUK VOLODYMYR</creator><creator>KROUNBI MOHAMAD</creator><creator>NIKITIN VLADIMIR</creator><scope>EVB</scope></search><sort><creationdate>20171204</creationdate><title>Magnetic memory device</title><author>APALKOV DMYTRO ; VOZNYUK VOLODYMYR ; KROUNBI MOHAMAD ; NIKITIN VLADIMIR</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170132646A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>APALKOV DMYTRO</creatorcontrib><creatorcontrib>VOZNYUK VOLODYMYR</creatorcontrib><creatorcontrib>KROUNBI MOHAMAD</creatorcontrib><creatorcontrib>NIKITIN VLADIMIR</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>APALKOV DMYTRO</au><au>VOZNYUK VOLODYMYR</au><au>KROUNBI MOHAMAD</au><au>NIKITIN VLADIMIR</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic memory device</title><date>2017-12-04</date><risdate>2017</risdate><abstract>A magnetic memory device is provided. The magnetic memory device includes a first reference magnetic layer, a first tunnel barrier layer disposed on the first reference magnetic layer, a second tunnel barrier layer, and a free magnetic layer disposed between the first tunnel barrier layer and the second tunnel barrier layer. At the edge of the free magnetic layer, the magnitude of an in-plane magnetostatic field from the first reference magnetic layer is less than 500 Oe. The magnitude of a fringing field can be reduced.
자기기억장치가 제공된다. 자기기억장치는, 제1 레퍼런스 자기 층(reference magnetic layer), 상기 제1 레퍼런스 자기 층 상에 배치되는 제1 터널 배리어 층(tunnel barrier layer), 제2 터널 배리어 층 및 상기 제1 터널 배리어 층과 상기 제2 터널 배리어 층 사이에 배치되는 자유 자기 층(free magnetic layer)을 포함하고, 상기 자유 자기 층의 에지(edge)에서, 상기 제1 레퍼런스 자기 층으로부터의 정자기장(in-plane magnetostatic field)의 크기는, 500Oe 보다 작다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Magnetic memory device |
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