METHOD AND DEVICE OF CONTROLLING OF SUBSTRATE PROCESSING APPARATUS
The present invention relates to a control method for a substrate processing apparatus and a control apparatus thereof. The substrate processing apparatus includes: a vacuum chamber; a shower head which supplies process gas into the vacuum chamber while including a top plate exposed to the outside o...
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| creator | KWON, MIN JI WANG, HYUN CHUL LEE, NAE IL LEE, KEUN HYUK |
| description | The present invention relates to a control method for a substrate processing apparatus and a control apparatus thereof. The substrate processing apparatus includes: a vacuum chamber; a shower head which supplies process gas into the vacuum chamber while including a top plate exposed to the outside of the vacuum chamber and an end plate arranged under the top plate to be exposed to the internal space of the vacuum chamber; and a heating element which is provided onto the upper surface of the shower head and selectively heats the top plate. The control method for the substrate processing apparatus includes: a temperature measuring step of measuring the temperature of the end plate; and a temperature control step of controlling the temperature of the end plate executing a heat transfer operation with the top plate to be within a set range by adjusting the temperature of the heating element according to the temperature of the end plate. By adjusting the temperature of the heating element in accordance with the temperature of the end plate, the present invention can maintain a uniform temperature of the process gas while reducing the amount of particles generated due to a temperature drop.
본 발명은 기판처리장치의 제어방법 및 제어장치에 관한 것으로, 진공챔버와; 진공챔버의 외부에 노출되는 탑 플레이트와, 탑 플레이트의 하부에 배치되며 진공챔버의 내부공간에 노출되는 엔드 플레이트를, 포함하며 진공챔버의 내부에 공정가스를 공급하는 샤워헤드와; 샤워헤드의 상면에 제공되며 탑 플레이트를 선택적으로 가열하는 가열 엘리먼트(heating element);를 포함하는 기판처리장치의 제어방법은, 엔드 플레이트의 온도를 측정하는 온도측정단계와, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도 조절을 통해 탑 플레이트와 열전달이 이루어지는 엔드 플레이트의 온도를 설정 범위 내로 제어하는 온도제어단계를 포함하고, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도를 조절함으로써, 공정중의 가스온도를 균일하게 유지할 수 있으며, 온도 저하에 따른 파티클 생성을 저감시킬 수 있다. |
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본 발명은 기판처리장치의 제어방법 및 제어장치에 관한 것으로, 진공챔버와; 진공챔버의 외부에 노출되는 탑 플레이트와, 탑 플레이트의 하부에 배치되며 진공챔버의 내부공간에 노출되는 엔드 플레이트를, 포함하며 진공챔버의 내부에 공정가스를 공급하는 샤워헤드와; 샤워헤드의 상면에 제공되며 탑 플레이트를 선택적으로 가열하는 가열 엘리먼트(heating element);를 포함하는 기판처리장치의 제어방법은, 엔드 플레이트의 온도를 측정하는 온도측정단계와, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도 조절을 통해 탑 플레이트와 열전달이 이루어지는 엔드 플레이트의 온도를 설정 범위 내로 제어하는 온도제어단계를 포함하고, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도를 조절함으로써, 공정중의 가스온도를 균일하게 유지할 수 있으며, 온도 저하에 따른 파티클 생성을 저감시킬 수 있다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170522&DB=EPODOC&CC=KR&NR=20170055746A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170522&DB=EPODOC&CC=KR&NR=20170055746A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, MIN JI</creatorcontrib><creatorcontrib>WANG, HYUN CHUL</creatorcontrib><creatorcontrib>LEE, NAE IL</creatorcontrib><creatorcontrib>LEE, KEUN HYUK</creatorcontrib><title>METHOD AND DEVICE OF CONTROLLING OF SUBSTRATE PROCESSING APPARATUS</title><description>The present invention relates to a control method for a substrate processing apparatus and a control apparatus thereof. The substrate processing apparatus includes: a vacuum chamber; a shower head which supplies process gas into the vacuum chamber while including a top plate exposed to the outside of the vacuum chamber and an end plate arranged under the top plate to be exposed to the internal space of the vacuum chamber; and a heating element which is provided onto the upper surface of the shower head and selectively heats the top plate. The control method for the substrate processing apparatus includes: a temperature measuring step of measuring the temperature of the end plate; and a temperature control step of controlling the temperature of the end plate executing a heat transfer operation with the top plate to be within a set range by adjusting the temperature of the heating element according to the temperature of the end plate. By adjusting the temperature of the heating element in accordance with the temperature of the end plate, the present invention can maintain a uniform temperature of the process gas while reducing the amount of particles generated due to a temperature drop.
본 발명은 기판처리장치의 제어방법 및 제어장치에 관한 것으로, 진공챔버와; 진공챔버의 외부에 노출되는 탑 플레이트와, 탑 플레이트의 하부에 배치되며 진공챔버의 내부공간에 노출되는 엔드 플레이트를, 포함하며 진공챔버의 내부에 공정가스를 공급하는 샤워헤드와; 샤워헤드의 상면에 제공되며 탑 플레이트를 선택적으로 가열하는 가열 엘리먼트(heating element);를 포함하는 기판처리장치의 제어방법은, 엔드 플레이트의 온도를 측정하는 온도측정단계와, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도 조절을 통해 탑 플레이트와 열전달이 이루어지는 엔드 플레이트의 온도를 설정 범위 내로 제어하는 온도제어단계를 포함하고, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도를 조절함으로써, 공정중의 가스온도를 균일하게 유지할 수 있으며, 온도 저하에 따른 파티클 생성을 저감시킬 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDydQ3x8HdRcPRzUXBxDfN0dlXwd1Nw9vcLCfL38fH0cwdxg0OdgkOCHENcFQKC_J1dg4NB4o4BAY5AsdBgHgbWtMSc4lReKM3NoOzmGuLsoZtakB-fWlyQmJyal1oS7x1kZGBobmBgampuYuZoTJwqAK3QLDM</recordid><startdate>20170522</startdate><enddate>20170522</enddate><creator>KWON, MIN JI</creator><creator>WANG, HYUN CHUL</creator><creator>LEE, NAE IL</creator><creator>LEE, KEUN HYUK</creator><scope>EVB</scope></search><sort><creationdate>20170522</creationdate><title>METHOD AND DEVICE OF CONTROLLING OF SUBSTRATE PROCESSING APPARATUS</title><author>KWON, MIN JI ; WANG, HYUN CHUL ; LEE, NAE IL ; LEE, KEUN HYUK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170055746A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, MIN JI</creatorcontrib><creatorcontrib>WANG, HYUN CHUL</creatorcontrib><creatorcontrib>LEE, NAE IL</creatorcontrib><creatorcontrib>LEE, KEUN HYUK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, MIN JI</au><au>WANG, HYUN CHUL</au><au>LEE, NAE IL</au><au>LEE, KEUN HYUK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND DEVICE OF CONTROLLING OF SUBSTRATE PROCESSING APPARATUS</title><date>2017-05-22</date><risdate>2017</risdate><abstract>The present invention relates to a control method for a substrate processing apparatus and a control apparatus thereof. The substrate processing apparatus includes: a vacuum chamber; a shower head which supplies process gas into the vacuum chamber while including a top plate exposed to the outside of the vacuum chamber and an end plate arranged under the top plate to be exposed to the internal space of the vacuum chamber; and a heating element which is provided onto the upper surface of the shower head and selectively heats the top plate. The control method for the substrate processing apparatus includes: a temperature measuring step of measuring the temperature of the end plate; and a temperature control step of controlling the temperature of the end plate executing a heat transfer operation with the top plate to be within a set range by adjusting the temperature of the heating element according to the temperature of the end plate. By adjusting the temperature of the heating element in accordance with the temperature of the end plate, the present invention can maintain a uniform temperature of the process gas while reducing the amount of particles generated due to a temperature drop.
본 발명은 기판처리장치의 제어방법 및 제어장치에 관한 것으로, 진공챔버와; 진공챔버의 외부에 노출되는 탑 플레이트와, 탑 플레이트의 하부에 배치되며 진공챔버의 내부공간에 노출되는 엔드 플레이트를, 포함하며 진공챔버의 내부에 공정가스를 공급하는 샤워헤드와; 샤워헤드의 상면에 제공되며 탑 플레이트를 선택적으로 가열하는 가열 엘리먼트(heating element);를 포함하는 기판처리장치의 제어방법은, 엔드 플레이트의 온도를 측정하는 온도측정단계와, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도 조절을 통해 탑 플레이트와 열전달이 이루어지는 엔드 플레이트의 온도를 설정 범위 내로 제어하는 온도제어단계를 포함하고, 엔드 플레이트의 온도에 따라 가열 엘리먼트의 온도를 조절함으로써, 공정중의 가스온도를 균일하게 유지할 수 있으며, 온도 저하에 따른 파티클 생성을 저감시킬 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | METHOD AND DEVICE OF CONTROLLING OF SUBSTRATE PROCESSING APPARATUS |
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