3 Embedded refresh controller and memory device including the same
A semiconductor device includes: a semiconductor die, an integrated semiconductor circuit, and a three-dimensional crack detection structure. The semiconductor die includes a center area and a peripheral area surrounding the center area. The integrated semiconductor circuit is formed on the center a...
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| creator | KWON, HYUK JOON LIM, BO TAK LEE, SEUNG SEOB |
| description | A semiconductor device includes: a semiconductor die, an integrated semiconductor circuit, and a three-dimensional crack detection structure. The semiconductor die includes a center area and a peripheral area surrounding the center area. The integrated semiconductor circuit is formed on the center area. The three-dimensional crack detection structure is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area. The semiconductor device uses the three-dimensional crack detection structure, which is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area having the integrated semiconductor circuit therein, to accurately detect various paths of crack penetration.
반도체 장치는, 반도체 다이, 반도체 집적 회로 및 3차원 크랙 검출 구조물(three-dimensional crack detection structure)을 포함한다. 상기 반도체 다이는 중앙 영역과 상기 중앙 영역을 둘러싸는 주변 영역을 포함한다. 상기 반도체 집적 회로는 상기 중앙 영역에 형성된다. 상기 3차원 크랙 검출 구조물은 수직 방향으로 확장되고 상기 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성된다. 상기 반도체 장치는 수직 방향으로 확장되고 반도체 집적 회로가 형성되는 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성되는 3차원 크랙 검출 구조물을 이용하여 다양한 경로의 크랙 침투를 정밀하게 검출할 수 있다. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20170051085A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20170051085A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20170051085A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAUBdAsDqL-w4POQmopulapCG7iXmLerQ0kLyWJgn_v4gc4neUs1bGhPjzADKaEMSFPZKOUFL1HIiNMASGmDzHezoKcWP9iJ08qEyibgLVajMZnbH6uVHXu76fLFnMckGdjISjD9bbT9V7rttaHtmv-W1_CezJv</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>3 Embedded refresh controller and memory device including the same</title><source>esp@cenet</source><creator>KWON, HYUK JOON ; LIM, BO TAK ; LEE, SEUNG SEOB</creator><creatorcontrib>KWON, HYUK JOON ; LIM, BO TAK ; LEE, SEUNG SEOB</creatorcontrib><description>A semiconductor device includes: a semiconductor die, an integrated semiconductor circuit, and a three-dimensional crack detection structure. The semiconductor die includes a center area and a peripheral area surrounding the center area. The integrated semiconductor circuit is formed on the center area. The three-dimensional crack detection structure is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area. The semiconductor device uses the three-dimensional crack detection structure, which is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area having the integrated semiconductor circuit therein, to accurately detect various paths of crack penetration.
반도체 장치는, 반도체 다이, 반도체 집적 회로 및 3차원 크랙 검출 구조물(three-dimensional crack detection structure)을 포함한다. 상기 반도체 다이는 중앙 영역과 상기 중앙 영역을 둘러싸는 주변 영역을 포함한다. 상기 반도체 집적 회로는 상기 중앙 영역에 형성된다. 상기 3차원 크랙 검출 구조물은 수직 방향으로 확장되고 상기 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성된다. 상기 반도체 장치는 수직 방향으로 확장되고 반도체 집적 회로가 형성되는 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성되는 3차원 크랙 검출 구조물을 이용하여 다양한 경로의 크랙 침투를 정밀하게 검출할 수 있다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170511&DB=EPODOC&CC=KR&NR=20170051085A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170511&DB=EPODOC&CC=KR&NR=20170051085A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, HYUK JOON</creatorcontrib><creatorcontrib>LIM, BO TAK</creatorcontrib><creatorcontrib>LEE, SEUNG SEOB</creatorcontrib><title>3 Embedded refresh controller and memory device including the same</title><description>A semiconductor device includes: a semiconductor die, an integrated semiconductor circuit, and a three-dimensional crack detection structure. The semiconductor die includes a center area and a peripheral area surrounding the center area. The integrated semiconductor circuit is formed on the center area. The three-dimensional crack detection structure is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area. The semiconductor device uses the three-dimensional crack detection structure, which is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area having the integrated semiconductor circuit therein, to accurately detect various paths of crack penetration.
반도체 장치는, 반도체 다이, 반도체 집적 회로 및 3차원 크랙 검출 구조물(three-dimensional crack detection structure)을 포함한다. 상기 반도체 다이는 중앙 영역과 상기 중앙 영역을 둘러싸는 주변 영역을 포함한다. 상기 반도체 집적 회로는 상기 중앙 영역에 형성된다. 상기 3차원 크랙 검출 구조물은 수직 방향으로 확장되고 상기 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성된다. 상기 반도체 장치는 수직 방향으로 확장되고 반도체 집적 회로가 형성되는 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성되는 3차원 크랙 검출 구조물을 이용하여 다양한 경로의 크랙 침투를 정밀하게 검출할 수 있다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAUBdAsDqL-w4POQmopulapCG7iXmLerQ0kLyWJgn_v4gc4neUs1bGhPjzADKaEMSFPZKOUFL1HIiNMASGmDzHezoKcWP9iJ08qEyibgLVajMZnbH6uVHXu76fLFnMckGdjISjD9bbT9V7rttaHtmv-W1_CezJv</recordid><startdate>20170511</startdate><enddate>20170511</enddate><creator>KWON, HYUK JOON</creator><creator>LIM, BO TAK</creator><creator>LEE, SEUNG SEOB</creator><scope>EVB</scope></search><sort><creationdate>20170511</creationdate><title>3 Embedded refresh controller and memory device including the same</title><author>KWON, HYUK JOON ; LIM, BO TAK ; LEE, SEUNG SEOB</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170051085A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, HYUK JOON</creatorcontrib><creatorcontrib>LIM, BO TAK</creatorcontrib><creatorcontrib>LEE, SEUNG SEOB</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, HYUK JOON</au><au>LIM, BO TAK</au><au>LEE, SEUNG SEOB</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>3 Embedded refresh controller and memory device including the same</title><date>2017-05-11</date><risdate>2017</risdate><abstract>A semiconductor device includes: a semiconductor die, an integrated semiconductor circuit, and a three-dimensional crack detection structure. The semiconductor die includes a center area and a peripheral area surrounding the center area. The integrated semiconductor circuit is formed on the center area. The three-dimensional crack detection structure is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area. The semiconductor device uses the three-dimensional crack detection structure, which is expanded in a vertical direction and is formed on the peripheral area into an annular shape to surround the center area having the integrated semiconductor circuit therein, to accurately detect various paths of crack penetration.
반도체 장치는, 반도체 다이, 반도체 집적 회로 및 3차원 크랙 검출 구조물(three-dimensional crack detection structure)을 포함한다. 상기 반도체 다이는 중앙 영역과 상기 중앙 영역을 둘러싸는 주변 영역을 포함한다. 상기 반도체 집적 회로는 상기 중앙 영역에 형성된다. 상기 3차원 크랙 검출 구조물은 수직 방향으로 확장되고 상기 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성된다. 상기 반도체 장치는 수직 방향으로 확장되고 반도체 집적 회로가 형성되는 중앙 영역을 둘러싸도록 상기 주변 영역에 환형으로 형성되는 3차원 크랙 검출 구조물을 이용하여 다양한 경로의 크랙 침투를 정밀하게 검출할 수 있다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | 3 Embedded refresh controller and memory device including the same |
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