PREPARING METHOD OF METAL CHALCOGENIDE THIN FILM USING LASER
The present invention relates to a producing method of a metal chalcogenide thin film using laser, a metal chalcogenide thin film produced by the method, and a device including the metal chalcogenide thin film. The present invention comprises: a step of coating solution containing a chalcogenide-con...
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| creator | LEE, CHANG GU LEE, JIN HWAN JUNG, JAE HYUCK |
| description | The present invention relates to a producing method of a metal chalcogenide thin film using laser, a metal chalcogenide thin film produced by the method, and a device including the metal chalcogenide thin film. The present invention comprises: a step of coating solution containing a chalcogenide-containing precursor on a substrate to form a film; and a step of forming the metal chalcogenide thin film by irradiating the film with laser. The present invention can control the thickness of the metal chalcogenide thin film formed by controlling conditions such as laser power and wavelength.
레이저를 이용한 금속 칼코게나이드 박막의 제조 방법, 상기 방법에 의하여 제조되는 금속 칼코게나이드 박막, 및 상기 금속 칼코게나이드 박막을 포함하는 소자에 관한 것이다. |
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레이저를 이용한 금속 칼코게나이드 박막의 제조 방법, 상기 방법에 의하여 제조되는 금속 칼코게나이드 박막, 및 상기 금속 칼코게나이드 박막을 포함하는 소자에 관한 것이다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170510&DB=EPODOC&CC=KR&NR=20170048713A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170510&DB=EPODOC&CC=KR&NR=20170048713A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, CHANG GU</creatorcontrib><creatorcontrib>LEE, JIN HWAN</creatorcontrib><creatorcontrib>JUNG, JAE HYUCK</creatorcontrib><title>PREPARING METHOD OF METAL CHALCOGENIDE THIN FILM USING LASER</title><description>The present invention relates to a producing method of a metal chalcogenide thin film using laser, a metal chalcogenide thin film produced by the method, and a device including the metal chalcogenide thin film. The present invention comprises: a step of coating solution containing a chalcogenide-containing precursor on a substrate to form a film; and a step of forming the metal chalcogenide thin film by irradiating the film with laser. The present invention can control the thickness of the metal chalcogenide thin film formed by controlling conditions such as laser power and wavelength.
레이저를 이용한 금속 칼코게나이드 박막의 제조 방법, 상기 방법에 의하여 제조되는 금속 칼코게나이드 박막, 및 상기 금속 칼코게나이드 박막을 포함하는 소자에 관한 것이다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAJCHINcAzy9HNX8HUN8fB3UfB3A7EcfRScPRx9nP3dXf08XVwVQjw8_RTcPH18FUKDQYp9HINdg3gYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSbx3kJGBobmBgYmFuaGxozFxqgCINSog</recordid><startdate>20170510</startdate><enddate>20170510</enddate><creator>LEE, CHANG GU</creator><creator>LEE, JIN HWAN</creator><creator>JUNG, JAE HYUCK</creator><scope>EVB</scope></search><sort><creationdate>20170510</creationdate><title>PREPARING METHOD OF METAL CHALCOGENIDE THIN FILM USING LASER</title><author>LEE, CHANG GU ; LEE, JIN HWAN ; JUNG, JAE HYUCK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170048713A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, CHANG GU</creatorcontrib><creatorcontrib>LEE, JIN HWAN</creatorcontrib><creatorcontrib>JUNG, JAE HYUCK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, CHANG GU</au><au>LEE, JIN HWAN</au><au>JUNG, JAE HYUCK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PREPARING METHOD OF METAL CHALCOGENIDE THIN FILM USING LASER</title><date>2017-05-10</date><risdate>2017</risdate><abstract>The present invention relates to a producing method of a metal chalcogenide thin film using laser, a metal chalcogenide thin film produced by the method, and a device including the metal chalcogenide thin film. The present invention comprises: a step of coating solution containing a chalcogenide-containing precursor on a substrate to form a film; and a step of forming the metal chalcogenide thin film by irradiating the film with laser. The present invention can control the thickness of the metal chalcogenide thin film formed by controlling conditions such as laser power and wavelength.
레이저를 이용한 금속 칼코게나이드 박막의 제조 방법, 상기 방법에 의하여 제조되는 금속 칼코게나이드 박막, 및 상기 금속 칼코게나이드 박막을 포함하는 소자에 관한 것이다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | PREPARING METHOD OF METAL CHALCOGENIDE THIN FILM USING LASER |
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