CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME
The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the meta...
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| creator | PENG JUNG HUEI CHU CHIA HUA LAI FEI LUNG LIN SHIANG CHI |
| description | The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer, and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
본 개시는, 기판, 기판 위의 금속화 층, 금속화 층 위의 감지 구조물, 및 감지 구조물에 인접한 신호 전송 구조물을 포함하는 CMOS 구조물을 제공한다. 감지 구조물은, 금속화 층 위의 아웃개싱 층, 아웃개싱 층 위의 패터닝된 아웃개싱 배리어, 및 패터닝된 아웃개싱 배리어 위의 전극을 포함한다. 신호 전송 구조물은 전극과 금속화 층을 전기적으로 연결한다. |
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본 개시는, 기판, 기판 위의 금속화 층, 금속화 층 위의 감지 구조물, 및 감지 구조물에 인접한 신호 전송 구조물을 포함하는 CMOS 구조물을 제공한다. 감지 구조물은, 금속화 층 위의 아웃개싱 층, 아웃개싱 층 위의 패터닝된 아웃개싱 배리어, 및 패터닝된 아웃개싱 배리어 위의 전극을 포함한다. 신호 전송 구조물은 전극과 금속화 층을 전기적으로 연결한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170425&DB=EPODOC&CC=KR&NR=20170044567A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170425&DB=EPODOC&CC=KR&NR=20170044567A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PENG JUNG HUEI</creatorcontrib><creatorcontrib>CHU CHIA HUA</creatorcontrib><creatorcontrib>LAI FEI LUNG</creatorcontrib><creatorcontrib>LIN SHIANG CHI</creatorcontrib><title>CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME</title><description>The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer, and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
본 개시는, 기판, 기판 위의 금속화 층, 금속화 층 위의 감지 구조물, 및 감지 구조물에 인접한 신호 전송 구조물을 포함하는 CMOS 구조물을 제공한다. 감지 구조물은, 금속화 층 위의 아웃개싱 층, 아웃개싱 층 위의 패터닝된 아웃개싱 배리어, 및 패터닝된 아웃개싱 배리어 위의 전극을 포함한다. 신호 전송 구조물은 전극과 금속화 층을 전기적으로 연결한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBy9vUP1vV19Q1WCA4JCnUOCQ1yVXD0c1HwdQ3x8HdR8HdTcPMP8vX0c1cI8XBVCHb0deVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhuYGBiYmpmbmjsbEqQIAAPYngQ</recordid><startdate>20170425</startdate><enddate>20170425</enddate><creator>PENG JUNG HUEI</creator><creator>CHU CHIA HUA</creator><creator>LAI FEI LUNG</creator><creator>LIN SHIANG CHI</creator><scope>EVB</scope></search><sort><creationdate>20170425</creationdate><title>CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME</title><author>PENG JUNG HUEI ; CHU CHIA HUA ; LAI FEI LUNG ; LIN SHIANG CHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170044567A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>PENG JUNG HUEI</creatorcontrib><creatorcontrib>CHU CHIA HUA</creatorcontrib><creatorcontrib>LAI FEI LUNG</creatorcontrib><creatorcontrib>LIN SHIANG CHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PENG JUNG HUEI</au><au>CHU CHIA HUA</au><au>LAI FEI LUNG</au><au>LIN SHIANG CHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME</title><date>2017-04-25</date><risdate>2017</risdate><abstract>The present disclosure provides a CMOS structure, including a substrate, a metallization layer over the substrate, a sensing structure over the metallization layer, and a signal transmitting structure adjacent to the sensing structure. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier over the outgassing layer, and an electrode over the patterned outgassing barrier. The signal transmitting structure electrically couples the electrode and the metallization layer.
본 개시는, 기판, 기판 위의 금속화 층, 금속화 층 위의 감지 구조물, 및 감지 구조물에 인접한 신호 전송 구조물을 포함하는 CMOS 구조물을 제공한다. 감지 구조물은, 금속화 층 위의 아웃개싱 층, 아웃개싱 층 위의 패터닝된 아웃개싱 배리어, 및 패터닝된 아웃개싱 배리어 위의 전극을 포함한다. 신호 전송 구조물은 전극과 금속화 층을 전기적으로 연결한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | CMOS-MEMS STRUCTURE AND METHOD OF FORMING THE SAME |
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