WAFER PROCESSING APPARATUS HAVING GAS INJECTOR
The present invention relates to a wafer processing device. The wafer processing device comprises: a reaction tube which is extended in a vertical direction to define a reaction chamber for receiving a boat supporting a plurality of wafers; and a gas injector which is extended in the vertical direct...
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| creator | SEO, EUN SUNG NOH, YOUNG JIN SONG, YOUNG CHANG CHOE, JAE MYUNG HA, SANG CHEOL CHOI, JI HOON KIM, YONG KWON |
| description | The present invention relates to a wafer processing device. The wafer processing device comprises: a reaction tube which is extended in a vertical direction to define a reaction chamber for receiving a boat supporting a plurality of wafers; and a gas injector which is extended in the vertical direction within the reaction tube and has a gas distribution body in which a plurality of injection holes are formed along the extension direction to inject reaction gas. The inner diameter of the gas distribution body is at least 10 mm, and the ratio of the cross-sectional area of the gas distribution body and the total cross-sectional area of the injection holes is 0.3 or less.
웨이퍼 처리 장치는 수직 방향으로 연장하며 복수 개의 웨이퍼들을 지지하는 보트를 수용하는 반응 챔버를 정의하는 반응 튜브, 및 상기 반응 튜브 내에서 상기 수직 방향으로 연장하며 반응 가스를 분사하기 위한 복수 개의 분사구들이 연장 방향을 따라 형성된 가스 분배체를 갖는 가스 인젝터를 포함한다. 상기 가스 분배체의 내경은 적어도 10mm이고, 상기 가스 분배체의 단면적과 상기 분사구들의 전체 단면적의 비율은 0.3 이하다. |
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웨이퍼 처리 장치는 수직 방향으로 연장하며 복수 개의 웨이퍼들을 지지하는 보트를 수용하는 반응 챔버를 정의하는 반응 튜브, 및 상기 반응 튜브 내에서 상기 수직 방향으로 연장하며 반응 가스를 분사하기 위한 복수 개의 분사구들이 연장 방향을 따라 형성된 가스 분배체를 갖는 가스 인젝터를 포함한다. 상기 가스 분배체의 내경은 적어도 10mm이고, 상기 가스 분배체의 단면적과 상기 분사구들의 전체 단면적의 비율은 0.3 이하다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170202&DB=EPODOC&CC=KR&NR=20170011443A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170202&DB=EPODOC&CC=KR&NR=20170011443A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SEO, EUN SUNG</creatorcontrib><creatorcontrib>NOH, YOUNG JIN</creatorcontrib><creatorcontrib>SONG, YOUNG CHANG</creatorcontrib><creatorcontrib>CHOE, JAE MYUNG</creatorcontrib><creatorcontrib>HA, SANG CHEOL</creatorcontrib><creatorcontrib>CHOI, JI HOON</creatorcontrib><creatorcontrib>KIM, YONG KWON</creatorcontrib><title>WAFER PROCESSING APPARATUS HAVING GAS INJECTOR</title><description>The present invention relates to a wafer processing device. The wafer processing device comprises: a reaction tube which is extended in a vertical direction to define a reaction chamber for receiving a boat supporting a plurality of wafers; and a gas injector which is extended in the vertical direction within the reaction tube and has a gas distribution body in which a plurality of injection holes are formed along the extension direction to inject reaction gas. The inner diameter of the gas distribution body is at least 10 mm, and the ratio of the cross-sectional area of the gas distribution body and the total cross-sectional area of the injection holes is 0.3 or less.
웨이퍼 처리 장치는 수직 방향으로 연장하며 복수 개의 웨이퍼들을 지지하는 보트를 수용하는 반응 챔버를 정의하는 반응 튜브, 및 상기 반응 튜브 내에서 상기 수직 방향으로 연장하며 반응 가스를 분사하기 위한 복수 개의 분사구들이 연장 방향을 따라 형성된 가스 분배체를 갖는 가스 인젝터를 포함한다. 상기 가스 분배체의 내경은 적어도 10mm이고, 상기 가스 분배체의 단면적과 상기 분사구들의 전체 단면적의 비율은 0.3 이하다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNALd3RzDVIICPJ3dg0O9vRzV3AMCHAMcgwJDVbwcAwDCbg7Bit4-nm5Oof4B_EwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDQ3MDA0NDExNjR2PiVAEAf_wmmA</recordid><startdate>20170202</startdate><enddate>20170202</enddate><creator>SEO, EUN SUNG</creator><creator>NOH, YOUNG JIN</creator><creator>SONG, YOUNG CHANG</creator><creator>CHOE, JAE MYUNG</creator><creator>HA, SANG CHEOL</creator><creator>CHOI, JI HOON</creator><creator>KIM, YONG KWON</creator><scope>EVB</scope></search><sort><creationdate>20170202</creationdate><title>WAFER PROCESSING APPARATUS HAVING GAS INJECTOR</title><author>SEO, EUN SUNG ; NOH, YOUNG JIN ; SONG, YOUNG CHANG ; CHOE, JAE MYUNG ; HA, SANG CHEOL ; CHOI, JI HOON ; KIM, YONG KWON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20170011443A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SEO, EUN SUNG</creatorcontrib><creatorcontrib>NOH, YOUNG JIN</creatorcontrib><creatorcontrib>SONG, YOUNG CHANG</creatorcontrib><creatorcontrib>CHOE, JAE MYUNG</creatorcontrib><creatorcontrib>HA, SANG CHEOL</creatorcontrib><creatorcontrib>CHOI, JI HOON</creatorcontrib><creatorcontrib>KIM, YONG KWON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SEO, EUN SUNG</au><au>NOH, YOUNG JIN</au><au>SONG, YOUNG CHANG</au><au>CHOE, JAE MYUNG</au><au>HA, SANG CHEOL</au><au>CHOI, JI HOON</au><au>KIM, YONG KWON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WAFER PROCESSING APPARATUS HAVING GAS INJECTOR</title><date>2017-02-02</date><risdate>2017</risdate><abstract>The present invention relates to a wafer processing device. The wafer processing device comprises: a reaction tube which is extended in a vertical direction to define a reaction chamber for receiving a boat supporting a plurality of wafers; and a gas injector which is extended in the vertical direction within the reaction tube and has a gas distribution body in which a plurality of injection holes are formed along the extension direction to inject reaction gas. The inner diameter of the gas distribution body is at least 10 mm, and the ratio of the cross-sectional area of the gas distribution body and the total cross-sectional area of the injection holes is 0.3 or less.
웨이퍼 처리 장치는 수직 방향으로 연장하며 복수 개의 웨이퍼들을 지지하는 보트를 수용하는 반응 챔버를 정의하는 반응 튜브, 및 상기 반응 튜브 내에서 상기 수직 방향으로 연장하며 반응 가스를 분사하기 위한 복수 개의 분사구들이 연장 방향을 따라 형성된 가스 분배체를 갖는 가스 인젝터를 포함한다. 상기 가스 분배체의 내경은 적어도 10mm이고, 상기 가스 분배체의 단면적과 상기 분사구들의 전체 단면적의 비율은 0.3 이하다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | WAFER PROCESSING APPARATUS HAVING GAS INJECTOR |
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