Method for protecting layer by forming Hydrocarbon-based extremely thin film

Method for protecting layer by forming Hydrocarbon-based extremely thin film

The present invention relates to a method for protecting layer by forming a hydrocarbon-based extremely thin film. The method for protecting a layer comprises: a step of providing a substrate having a target layer; and a step of forming a protective layer contacting and covering the target layer on...

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Hauptverfasser: NAMBA KUNITOSHI, NONAKA YUYA, NAKANO AKINORI, KATO RICHIKA, OKURO SEIJI
Format: Patent
Sprache:eng ; kor
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NAMBA KUNITOSHI
NONAKA YUYA
NAKANO AKINORI
KATO RICHIKA
OKURO SEIJI
description The present invention relates to a method for protecting layer by forming a hydrocarbon-based extremely thin film. The method for protecting a layer comprises: a step of providing a substrate having a target layer; and a step of forming a protective layer contacting and covering the target layer on the target layer. The protective layer includes a hydrocarbon-based layer constituting at least upper part of the protective layer, and the hydrocarbon-based layer is formed by plasma-enhanced atomic layer deposition (PEALD) using an alkylaminosilane precursor and a non-active gas without a reactant. 층의 보호 방법이: 목표층을 갖는 기판을 제공하는 단계; 및 상기 목표층 위에 상기 목표층과 접촉하고 상기 목표층을 피복하는 보호층을 형성하는 단계를 포함한다. 상기 보호층은 상기 보호층의 적어도 상부 부분을 이루는 탄화수소-기반 층을 포함하고, 상기 탄화수소-기반 층은 반응물 없이 알킬아미노실란 전구체와 불활성 가스를 이용한 플라스마-강화 원자층 증착(plasma-enhanced atomic layer deposition, PEALD)에 의하여 형성된다.
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for protecting layer by forming Hydrocarbon-based extremely thin film
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