SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A method of fabricating a semiconductor structure includes a step of accommodating a first substrate comprising a first surface, a second surface opposite the first surface, and a plurality of conductive bumps disposed over the first surface; a step of accommodating a second substrate; a step of dis...
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| creator | HSIEH CHING HUA LIU KUO CHIO KU CHIN YU YANG SHENG PIN WANG HSI CHING CHANG KUO PIN KUO CHENG YU LIU CHUNG SHI YU CHEN HUA HUANG ISAAC LEI YI YANG WU KAI DI LIAO DE DUI HUANG TSUNG LUNG KALNITSKY ALEXANDER |
| description | A method of fabricating a semiconductor structure includes a step of accommodating a first substrate comprising a first surface, a second surface opposite the first surface, and a plurality of conductive bumps disposed over the first surface; a step of accommodating a second substrate; a step of disposing an adhesive on the first substrate or the second substrate; a step of heating the adhesive in a first atmosphere; a step of bonding the first substrate to the second substrate by applying a force less than about 10,000 N to the first or second substrate and heating the adhesive in a second atmosphere; and a step of thinning the thickness of the first substrate from the second surface. So, device performance can be improved.
반도체 구조물을 제조하는 방법은, 제1 표면, 제1 표면과 대향하는 제2 표면, 및 제1 표면 위에 배치된 복수의 전도성 범프를 포함하는 제1 기판을 수용하는 단계; 제2 기판을 수용하는 단계; 제1 기판 또는 제2 기판 위에 접착제를 배치하는 단계; 접착제를 제1 분위기에서 가열하는 단계; 제1 기판 또는 제2 기판에 약 10,000N보다 적은 힘을 인가하고 접착제를 제2 분위기에서 가열함으로써, 제1 기판을 제2 기판과 본딩하는 단계; 및 제2 표면으로부터 제1 기판의 두께를 박형화하는 단계를 포함한다. |
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반도체 구조물을 제조하는 방법은, 제1 표면, 제1 표면과 대향하는 제2 표면, 및 제1 표면 위에 배치된 복수의 전도성 범프를 포함하는 제1 기판을 수용하는 단계; 제2 기판을 수용하는 단계; 제1 기판 또는 제2 기판 위에 접착제를 배치하는 단계; 접착제를 제1 분위기에서 가열하는 단계; 제1 기판 또는 제2 기판에 약 10,000N보다 적은 힘을 인가하고 접착제를 제2 분위기에서 가열함으로써, 제1 기판을 제2 기판과 본딩하는 단계; 및 제2 표면으로부터 제1 기판의 두께를 박형화하는 단계를 포함한다.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161221&DB=EPODOC&CC=KR&NR=20160146461A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161221&DB=EPODOC&CC=KR&NR=20160146461A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HSIEH CHING HUA</creatorcontrib><creatorcontrib>LIU KUO CHIO</creatorcontrib><creatorcontrib>KU CHIN YU</creatorcontrib><creatorcontrib>YANG SHENG PIN</creatorcontrib><creatorcontrib>WANG HSI CHING</creatorcontrib><creatorcontrib>CHANG KUO PIN</creatorcontrib><creatorcontrib>KUO CHENG YU</creatorcontrib><creatorcontrib>LIU CHUNG SHI</creatorcontrib><creatorcontrib>YU CHEN HUA</creatorcontrib><creatorcontrib>HUANG ISAAC</creatorcontrib><creatorcontrib>LEI YI YANG</creatorcontrib><creatorcontrib>WU KAI DI</creatorcontrib><creatorcontrib>LIAO DE DUI</creatorcontrib><creatorcontrib>HUANG TSUNG LUNG</creatorcontrib><creatorcontrib>KALNITSKY ALEXANDER</creatorcontrib><title>SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF</title><description>A method of fabricating a semiconductor structure includes a step of accommodating a first substrate comprising a first surface, a second surface opposite the first surface, and a plurality of conductive bumps disposed over the first surface; a step of accommodating a second substrate; a step of disposing an adhesive on the first substrate or the second substrate; a step of heating the adhesive in a first atmosphere; a step of bonding the first substrate to the second substrate by applying a force less than about 10,000 N to the first or second substrate and heating the adhesive in a second atmosphere; and a step of thinning the thickness of the first substrate from the second surface. So, device performance can be improved.
반도체 구조물을 제조하는 방법은, 제1 표면, 제1 표면과 대향하는 제2 표면, 및 제1 표면 위에 배치된 복수의 전도성 범프를 포함하는 제1 기판을 수용하는 단계; 제2 기판을 수용하는 단계; 제1 기판 또는 제2 기판 위에 접착제를 배치하는 단계; 접착제를 제1 분위기에서 가열하는 단계; 제1 기판 또는 제2 기판에 약 10,000N보다 적은 힘을 인가하고 접착제를 제2 분위기에서 가열함으로써, 제1 기판을 제2 기판과 본딩하는 단계; 및 제2 표면으로부터 제1 기판의 두께를 박형화하는 단계를 포함한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIdvX1dPb3cwl1DvEPUggOCQIyQoNcFRz9XBR8Hf1C3RxBfE8_dwVf1xAPfxeFEA_XIFd_Nx4G1rTEnOJUXijNzaDs5hri7KGbWpAfn1pckJicmpdaEu8dZGRgaGZgaGJmYmboaEycKgA8uim-</recordid><startdate>20161221</startdate><enddate>20161221</enddate><creator>HSIEH CHING HUA</creator><creator>LIU KUO CHIO</creator><creator>KU CHIN YU</creator><creator>YANG SHENG PIN</creator><creator>WANG HSI CHING</creator><creator>CHANG KUO PIN</creator><creator>KUO CHENG YU</creator><creator>LIU CHUNG SHI</creator><creator>YU CHEN HUA</creator><creator>HUANG ISAAC</creator><creator>LEI YI YANG</creator><creator>WU KAI DI</creator><creator>LIAO DE DUI</creator><creator>HUANG TSUNG LUNG</creator><creator>KALNITSKY ALEXANDER</creator><scope>EVB</scope></search><sort><creationdate>20161221</creationdate><title>SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF</title><author>HSIEH CHING HUA ; LIU KUO CHIO ; KU CHIN YU ; YANG SHENG PIN ; WANG HSI CHING ; CHANG KUO PIN ; KUO CHENG YU ; LIU CHUNG SHI ; YU CHEN HUA ; HUANG ISAAC ; LEI YI YANG ; WU KAI DI ; LIAO DE DUI ; HUANG TSUNG LUNG ; KALNITSKY ALEXANDER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20160146461A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HSIEH CHING HUA</creatorcontrib><creatorcontrib>LIU KUO CHIO</creatorcontrib><creatorcontrib>KU CHIN YU</creatorcontrib><creatorcontrib>YANG SHENG PIN</creatorcontrib><creatorcontrib>WANG HSI CHING</creatorcontrib><creatorcontrib>CHANG KUO PIN</creatorcontrib><creatorcontrib>KUO CHENG YU</creatorcontrib><creatorcontrib>LIU CHUNG SHI</creatorcontrib><creatorcontrib>YU CHEN HUA</creatorcontrib><creatorcontrib>HUANG ISAAC</creatorcontrib><creatorcontrib>LEI YI YANG</creatorcontrib><creatorcontrib>WU KAI DI</creatorcontrib><creatorcontrib>LIAO DE DUI</creatorcontrib><creatorcontrib>HUANG TSUNG LUNG</creatorcontrib><creatorcontrib>KALNITSKY ALEXANDER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HSIEH CHING HUA</au><au>LIU KUO CHIO</au><au>KU CHIN YU</au><au>YANG SHENG PIN</au><au>WANG HSI CHING</au><au>CHANG KUO PIN</au><au>KUO CHENG YU</au><au>LIU CHUNG SHI</au><au>YU CHEN HUA</au><au>HUANG ISAAC</au><au>LEI YI YANG</au><au>WU KAI DI</au><au>LIAO DE DUI</au><au>HUANG TSUNG LUNG</au><au>KALNITSKY ALEXANDER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF</title><date>2016-12-21</date><risdate>2016</risdate><abstract>A method of fabricating a semiconductor structure includes a step of accommodating a first substrate comprising a first surface, a second surface opposite the first surface, and a plurality of conductive bumps disposed over the first surface; a step of accommodating a second substrate; a step of disposing an adhesive on the first substrate or the second substrate; a step of heating the adhesive in a first atmosphere; a step of bonding the first substrate to the second substrate by applying a force less than about 10,000 N to the first or second substrate and heating the adhesive in a second atmosphere; and a step of thinning the thickness of the first substrate from the second surface. So, device performance can be improved.
반도체 구조물을 제조하는 방법은, 제1 표면, 제1 표면과 대향하는 제2 표면, 및 제1 표면 위에 배치된 복수의 전도성 범프를 포함하는 제1 기판을 수용하는 단계; 제2 기판을 수용하는 단계; 제1 기판 또는 제2 기판 위에 접착제를 배치하는 단계; 접착제를 제1 분위기에서 가열하는 단계; 제1 기판 또는 제2 기판에 약 10,000N보다 적은 힘을 인가하고 접착제를 제2 분위기에서 가열함으로써, 제1 기판을 제2 기판과 본딩하는 단계; 및 제2 표면으로부터 제1 기판의 두께를 박형화하는 단계를 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
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