METHOD FOR DETECTING AN OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE SAME
According to the present invention, disclosed is a method to detect an overlay error, to efficiently measure an overlay key by using a scatterometry target. The method comprises: a step of forming a first overly key on a first layer, wherein the first overly key includes a plurality of first target...
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| creator | KO, KANG WOONG HORIE MASAHIRO JEON, HYOUNG JO SONG, GIL WOO |
| description | According to the present invention, disclosed is a method to detect an overlay error, to efficiently measure an overlay key by using a scatterometry target. The method comprises: a step of forming a first overly key on a first layer, wherein the first overly key includes a plurality of first target patterns with a first pitch; a step of forming a second overlay key on a second layer vertically arranged with respect to the first layer, wherein the second overly key includes a plurality of second target patterns with a second pitch different from the first pitch; a step of irradiating incident light with a first frequency to the first and the second layer; a step of acquiring a phase pattern of a reflective light with respect to the incident light from the reflective light reflected from the first and the second layer; and a step of analyzing the phase pattern of the reflective light to detect an overlay error of the first and the second layer.
오버레이 에러의 검출 방법이 제공된다. 오버레이 에러의 검출 방법은, 제1 레이어에 제1 오버레이 키를 형성하고, 상기 제1 오버레이 키는 제1 피치를 갖는 복수의 제1 타겟 패턴을 포함하고, 상기 제1 레이어에 대해 수직으로 배치된 제2 레이어에 제2 오버레이 키를 형성하고, 상기 제2 오버레이 키는 상기 제1 피치와 다른 제2 피치를 갖는 복수의 제2 타겟 패턴을 포함하고, 상기 제1 레이어 및 상기 제2 레이어에 제1 파장을 갖는 입사광을 조사하고, 상기 제1 레이어 및 상기 제2 레이어로부터 반사된 반사광으로부터 상기 입사광에 대한 상기 반사광의 위상 패턴을 획득하고, 상기 반사광의 위상 패턴을 분석하여 상기 제1 레이어 및 상기 제2 레이어의 오버레이 에러를 검출하는 것을 포함한다. |
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오버레이 에러의 검출 방법이 제공된다. 오버레이 에러의 검출 방법은, 제1 레이어에 제1 오버레이 키를 형성하고, 상기 제1 오버레이 키는 제1 피치를 갖는 복수의 제1 타겟 패턴을 포함하고, 상기 제1 레이어에 대해 수직으로 배치된 제2 레이어에 제2 오버레이 키를 형성하고, 상기 제2 오버레이 키는 상기 제1 피치와 다른 제2 피치를 갖는 복수의 제2 타겟 패턴을 포함하고, 상기 제1 레이어 및 상기 제2 레이어에 제1 파장을 갖는 입사광을 조사하고, 상기 제1 레이어 및 상기 제2 레이어로부터 반사된 반사광으로부터 상기 입사광에 대한 상기 반사광의 위상 패턴을 획득하고, 상기 반사광의 위상 패턴을 분석하여 상기 제1 레이어 및 상기 제2 레이어의 오버레이 에러를 검출하는 것을 포함한다.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161019&DB=EPODOC&CC=KR&NR=20160121206A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161019&DB=EPODOC&CC=KR&NR=20160121206A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO, KANG WOONG</creatorcontrib><creatorcontrib>HORIE MASAHIRO</creatorcontrib><creatorcontrib>JEON, HYOUNG JO</creatorcontrib><creatorcontrib>SONG, GIL WOO</creatorcontrib><title>METHOD FOR DETECTING AN OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE SAME</title><description>According to the present invention, disclosed is a method to detect an overlay error, to efficiently measure an overlay key by using a scatterometry target. The method comprises: a step of forming a first overly key on a first layer, wherein the first overly key includes a plurality of first target patterns with a first pitch; a step of forming a second overlay key on a second layer vertically arranged with respect to the first layer, wherein the second overly key includes a plurality of second target patterns with a second pitch different from the first pitch; a step of irradiating incident light with a first frequency to the first and the second layer; a step of acquiring a phase pattern of a reflective light with respect to the incident light from the reflective light reflected from the first and the second layer; and a step of analyzing the phase pattern of the reflective light to detect an overlay error of the first and the second layer.
오버레이 에러의 검출 방법이 제공된다. 오버레이 에러의 검출 방법은, 제1 레이어에 제1 오버레이 키를 형성하고, 상기 제1 오버레이 키는 제1 피치를 갖는 복수의 제1 타겟 패턴을 포함하고, 상기 제1 레이어에 대해 수직으로 배치된 제2 레이어에 제2 오버레이 키를 형성하고, 상기 제2 오버레이 키는 상기 제1 피치와 다른 제2 피치를 갖는 복수의 제2 타겟 패턴을 포함하고, 상기 제1 레이어 및 상기 제2 레이어에 제1 파장을 갖는 입사광을 조사하고, 상기 제1 레이어 및 상기 제2 레이어로부터 반사된 반사광으로부터 상기 입사광에 대한 상기 반사광의 위상 패턴을 획득하고, 상기 반사광의 위상 패턴을 분석하여 상기 제1 레이어 및 상기 제2 레이어의 오버레이 에러를 검출하는 것을 포함한다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAUheEuDqK-wwVnIYnQ_ZLcmqJJIL0pOIUicRIt1PfHFhwcnQ6c_1tX2RHbYKAJEQwxaW79CdBD6Cle8AoU45zQG_iRDn1qUHOKi-7ItTp4kzTPLXXLx5agQ0fbanUfHlPZfXdT7RtibQ9lfOUyjcOtPMs7n6MSshZSSSVqPP6nPgqtM-E</recordid><startdate>20161019</startdate><enddate>20161019</enddate><creator>KO, KANG WOONG</creator><creator>HORIE MASAHIRO</creator><creator>JEON, HYOUNG JO</creator><creator>SONG, GIL WOO</creator><scope>EVB</scope></search><sort><creationdate>20161019</creationdate><title>METHOD FOR DETECTING AN OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE SAME</title><author>KO, KANG WOONG ; HORIE MASAHIRO ; JEON, HYOUNG JO ; SONG, GIL WOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20160121206A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2016</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KO, KANG WOONG</creatorcontrib><creatorcontrib>HORIE MASAHIRO</creatorcontrib><creatorcontrib>JEON, HYOUNG JO</creatorcontrib><creatorcontrib>SONG, GIL WOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KO, KANG WOONG</au><au>HORIE MASAHIRO</au><au>JEON, HYOUNG JO</au><au>SONG, GIL WOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR DETECTING AN OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE SAME</title><date>2016-10-19</date><risdate>2016</risdate><abstract>According to the present invention, disclosed is a method to detect an overlay error, to efficiently measure an overlay key by using a scatterometry target. The method comprises: a step of forming a first overly key on a first layer, wherein the first overly key includes a plurality of first target patterns with a first pitch; a step of forming a second overlay key on a second layer vertically arranged with respect to the first layer, wherein the second overly key includes a plurality of second target patterns with a second pitch different from the first pitch; a step of irradiating incident light with a first frequency to the first and the second layer; a step of acquiring a phase pattern of a reflective light with respect to the incident light from the reflective light reflected from the first and the second layer; and a step of analyzing the phase pattern of the reflective light to detect an overlay error of the first and the second layer.
오버레이 에러의 검출 방법이 제공된다. 오버레이 에러의 검출 방법은, 제1 레이어에 제1 오버레이 키를 형성하고, 상기 제1 오버레이 키는 제1 피치를 갖는 복수의 제1 타겟 패턴을 포함하고, 상기 제1 레이어에 대해 수직으로 배치된 제2 레이어에 제2 오버레이 키를 형성하고, 상기 제2 오버레이 키는 상기 제1 피치와 다른 제2 피치를 갖는 복수의 제2 타겟 패턴을 포함하고, 상기 제1 레이어 및 상기 제2 레이어에 제1 파장을 갖는 입사광을 조사하고, 상기 제1 레이어 및 상기 제2 레이어로부터 반사된 반사광으로부터 상기 입사광에 대한 상기 반사광의 위상 패턴을 획득하고, 상기 반사광의 위상 패턴을 분석하여 상기 제1 레이어 및 상기 제2 레이어의 오버레이 에러를 검출하는 것을 포함한다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | METHOD FOR DETECTING AN OVERLAY ERROR AND METHOD FOR MANUFACTURING SEMICONDUCTOR USING THE SAME |
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