SEMICONDUCTOR MEMORY DEVICE
The present invention relates to a semiconductor memory device comprising multiple memory cells connected to a word line and an X decoder connected to the word line and applying operation voltage to the word line. A tunnel insulation film included in multiple memory cells has different thickness dep...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present invention relates to a semiconductor memory device comprising multiple memory cells connected to a word line and an X decoder connected to the word line and applying operation voltage to the word line. A tunnel insulation film included in multiple memory cells has different thickness depending on a distance from the X decoder.
본 발명은 반도체 메모리 장치에 관한 것으로, 워드라인에 연결되는 다수의 메모리 셀들 및 상기 워드라인과 연결되며, 상기 워드라인에 동작 전압을 인가하기 위한 X 디코더를 포함하며, 상기 다수의 메모리 셀들에 포함된 터널 절연막은 상기 X 디코더와의 거리에 따라 두께가 다르다. |
|---|