SEMICONDUCTOR DEVICE INCLUDING FIN-TYPE FIELD EFFECT TRANSISTOR

According to a technical concept of the present invention, a semiconductor device comprises: a semiconductor substrate; a fin-type structure formed on the semiconductor substrate; an insulation layer formed on the semiconductor substrate to have an upper surface lower than an upper surface of the fi...

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Bibliographische Detailangaben
1. Verfasser:	DONG YAOQI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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