DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM
전달 장치(170)는 기판 홀더(40)를 지지하는 지지부(70)와, 기판 홀더(40)의 기판 유지부(80)에서 기판을 승강 가능한 승강 부재(91)와, 승강 부재(91)의 승강에 따라 승강하고, 승강 부재(91)가 기판(W)을 수취할 때에, 기판(W)과 승강 부재(91)의 사이에 개재되고, 기판(W)이 기판 유지부(80)에 유지된 때에, 기판(W)의 이면측에서 기판 홀더(40)의 승강 부재(91)가 삽통하는 구멍(81)을 차폐하는 차폐 부재(82)를 가진다. 그리고, 승강 부재(91)가 상승한 상태에서, 반송 장치(201)에 의해,...
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creator | MORISAKI EISUKE KIMOTO TOMOHISA |
description | 전달 장치(170)는 기판 홀더(40)를 지지하는 지지부(70)와, 기판 홀더(40)의 기판 유지부(80)에서 기판을 승강 가능한 승강 부재(91)와, 승강 부재(91)의 승강에 따라 승강하고, 승강 부재(91)가 기판(W)을 수취할 때에, 기판(W)과 승강 부재(91)의 사이에 개재되고, 기판(W)이 기판 유지부(80)에 유지된 때에, 기판(W)의 이면측에서 기판 홀더(40)의 승강 부재(91)가 삽통하는 구멍(81)을 차폐하는 차폐 부재(82)를 가진다. 그리고, 승강 부재(91)가 상승한 상태에서, 반송 장치(201)에 의해, 차폐 부재(82) 위에 기판(W)을 탑재하거나, 또는 차폐 부재(82) 상의 기판(W)을 반송한다.
A transferring device includes a supporting part configured to support a substrate holder, an elevation member configured to raise and lower a substrate at a substrate holding portion of the substrate holder, and a shielding member configured to be raised and lowered by the elevation member. The shielding member is interposed between the substrate and the elevation member when the elevation member receives the substrate. When the substrate is held on the substrate holding portion, the shielding member shields, at a backside of the substrate, a hole in the substrate holder through which the elevation member is inserted. In a state where the elevation member is raised, the substrate is mounted on the shielding member, or the substrate on shielding member is transferred therefrom. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20160021247A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20160021247A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20160021247A3</originalsourceid><addsrcrecordid>eNrjZJjs4hrm6eyq4OjnouDrGuLh76Lg5h-kEBLk6Bfs5hoU5OnnrhAc6hQMFAhxBUsBsS9I1NnfN8A_FKgt2NXX09nfzyXUOQQk7enjqwM2LjgyOMTVF91kIrTzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MzAwMjQyMTc0dj4lQBADGgQmc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM</title><source>esp@cenet</source><creator>MORISAKI EISUKE ; KIMOTO TOMOHISA</creator><creatorcontrib>MORISAKI EISUKE ; KIMOTO TOMOHISA</creatorcontrib><description>전달 장치(170)는 기판 홀더(40)를 지지하는 지지부(70)와, 기판 홀더(40)의 기판 유지부(80)에서 기판을 승강 가능한 승강 부재(91)와, 승강 부재(91)의 승강에 따라 승강하고, 승강 부재(91)가 기판(W)을 수취할 때에, 기판(W)과 승강 부재(91)의 사이에 개재되고, 기판(W)이 기판 유지부(80)에 유지된 때에, 기판(W)의 이면측에서 기판 홀더(40)의 승강 부재(91)가 삽통하는 구멍(81)을 차폐하는 차폐 부재(82)를 가진다. 그리고, 승강 부재(91)가 상승한 상태에서, 반송 장치(201)에 의해, 차폐 부재(82) 위에 기판(W)을 탑재하거나, 또는 차폐 부재(82) 상의 기판(W)을 반송한다.
A transferring device includes a supporting part configured to support a substrate holder, an elevation member configured to raise and lower a substrate at a substrate holding portion of the substrate holder, and a shielding member configured to be raised and lowered by the elevation member. The shielding member is interposed between the substrate and the elevation member when the elevation member receives the substrate. When the substrate is held on the substrate holding portion, the shielding member shields, at a backside of the substrate, a hole in the substrate holder through which the elevation member is inserted. In a state where the elevation member is raised, the substrate is mounted on the shielding member, or the substrate on shielding member is transferred therefrom.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160224&DB=EPODOC&CC=KR&NR=20160021247A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160224&DB=EPODOC&CC=KR&NR=20160021247A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MORISAKI EISUKE</creatorcontrib><creatorcontrib>KIMOTO TOMOHISA</creatorcontrib><title>DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM</title><description>전달 장치(170)는 기판 홀더(40)를 지지하는 지지부(70)와, 기판 홀더(40)의 기판 유지부(80)에서 기판을 승강 가능한 승강 부재(91)와, 승강 부재(91)의 승강에 따라 승강하고, 승강 부재(91)가 기판(W)을 수취할 때에, 기판(W)과 승강 부재(91)의 사이에 개재되고, 기판(W)이 기판 유지부(80)에 유지된 때에, 기판(W)의 이면측에서 기판 홀더(40)의 승강 부재(91)가 삽통하는 구멍(81)을 차폐하는 차폐 부재(82)를 가진다. 그리고, 승강 부재(91)가 상승한 상태에서, 반송 장치(201)에 의해, 차폐 부재(82) 위에 기판(W)을 탑재하거나, 또는 차폐 부재(82) 상의 기판(W)을 반송한다.
A transferring device includes a supporting part configured to support a substrate holder, an elevation member configured to raise and lower a substrate at a substrate holding portion of the substrate holder, and a shielding member configured to be raised and lowered by the elevation member. The shielding member is interposed between the substrate and the elevation member when the elevation member receives the substrate. When the substrate is held on the substrate holding portion, the shielding member shields, at a backside of the substrate, a hole in the substrate holder through which the elevation member is inserted. In a state where the elevation member is raised, the substrate is mounted on the shielding member, or the substrate on shielding member is transferred therefrom.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJjs4hrm6eyq4OjnouDrGuLh76Lg5h-kEBLk6Bfs5hoU5OnnrhAc6hQMFAhxBUsBsS9I1NnfN8A_FKgt2NXX09nfzyXUOQQk7enjqwM2LjgyOMTVF91kIrTzMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MzAwMjQyMTc0dj4lQBADGgQmc</recordid><startdate>20160224</startdate><enddate>20160224</enddate><creator>MORISAKI EISUKE</creator><creator>KIMOTO TOMOHISA</creator><scope>EVB</scope></search><sort><creationdate>20160224</creationdate><title>DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM</title><author>MORISAKI EISUKE ; KIMOTO TOMOHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20160021247A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MORISAKI EISUKE</creatorcontrib><creatorcontrib>KIMOTO TOMOHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MORISAKI EISUKE</au><au>KIMOTO TOMOHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM</title><date>2016-02-24</date><risdate>2016</risdate><abstract>전달 장치(170)는 기판 홀더(40)를 지지하는 지지부(70)와, 기판 홀더(40)의 기판 유지부(80)에서 기판을 승강 가능한 승강 부재(91)와, 승강 부재(91)의 승강에 따라 승강하고, 승강 부재(91)가 기판(W)을 수취할 때에, 기판(W)과 승강 부재(91)의 사이에 개재되고, 기판(W)이 기판 유지부(80)에 유지된 때에, 기판(W)의 이면측에서 기판 홀더(40)의 승강 부재(91)가 삽통하는 구멍(81)을 차폐하는 차폐 부재(82)를 가진다. 그리고, 승강 부재(91)가 상승한 상태에서, 반송 장치(201)에 의해, 차폐 부재(82) 위에 기판(W)을 탑재하거나, 또는 차폐 부재(82) 상의 기판(W)을 반송한다.
A transferring device includes a supporting part configured to support a substrate holder, an elevation member configured to raise and lower a substrate at a substrate holding portion of the substrate holder, and a shielding member configured to be raised and lowered by the elevation member. The shielding member is interposed between the substrate and the elevation member when the elevation member receives the substrate. When the substrate is held on the substrate holding portion, the shielding member shields, at a backside of the substrate, a hole in the substrate holder through which the elevation member is inserted. In a state where the elevation member is raised, the substrate is mounted on the shielding member, or the substrate on shielding member is transferred therefrom.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | DEVICE AND METHOD FOR TRANSFERRING SUBSTRATE FOR FORMING COMPOUND SEMICONDUCTOR FILM, AND SYSTEM AND METHOD FOR FORMING COMPOUND SEMICONDUCTOR FILM |
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