ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL
저위스커성, 저응착 마모성 및 고내구성을 갖는 전자 부품용 금속 재료, 그것을 사용한 커넥터 단자, 커넥터 및 전자 부품을 제공한다. 전자 부품용 금속 재료는, 기재와, 기재 상에 형성된, Ni, Cr, Mn, Fe, Co 및 Cu 로 이루어지는 군인 A 구성 원소군에서 선택된 1 종 또는 2 종 이상으로 구성된 하층과, 하층 상에 형성된, Ag, Au, Pt, Pd, Ru, Rh, Os 및 Ir 로 이루어지는 군인 B 구성 원소군에서 선택된 1 종 또는 2 종류 이상과, Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KODAMA ATSUSHI SHIBUYA YOSHITAKA FUKAMACHI KAZUHIKO |
| description | 저위스커성, 저응착 마모성 및 고내구성을 갖는 전자 부품용 금속 재료, 그것을 사용한 커넥터 단자, 커넥터 및 전자 부품을 제공한다. 전자 부품용 금속 재료는, 기재와, 기재 상에 형성된, Ni, Cr, Mn, Fe, Co 및 Cu 로 이루어지는 군인 A 구성 원소군에서 선택된 1 종 또는 2 종 이상으로 구성된 하층과, 하층 상에 형성된, Ag, Au, Pt, Pd, Ru, Rh, Os 및 Ir 로 이루어지는 군인 B 구성 원소군에서 선택된 1 종 또는 2 종류 이상과, Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 합금이 구성된 중층과, 중층 상에 형성된 Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 구성된 상층을 구비하고, 하층의 두께가 0.05 ㎛ 이상 5.00 ㎛ 미만이고, 중층의 두께가 0.02 ㎛ 이상 0.80 ㎛ 미만이고, 상층의 두께가 0.005 ㎛ 이상 0.30 ㎛ 미만이다.
The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.02 µm or more and less than 0.80 µm; and the thickness of the upper layer is 0.005 µm or more and less than 0.30 µm. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20150053264A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20150053264A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20150053264A3</originalsourceid><addsrcrecordid>eNrjZFjv6uPqHBLk7-fprODs7xvg7-fqF6Lg6xri6KPg6xjiGuQJZDj6uQA5fqFujs4hoUGefu4gBR7-LgohHq5Brv5uOmAVzv5-fkCz_IMUgNp8Pf0cfXSQxEAqsNoVGgwyMNjRE4c8qlt4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGpgYGpsZGZiaMxcaoA4zRKCw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL</title><source>esp@cenet</source><creator>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</creator><creatorcontrib>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</creatorcontrib><description>저위스커성, 저응착 마모성 및 고내구성을 갖는 전자 부품용 금속 재료, 그것을 사용한 커넥터 단자, 커넥터 및 전자 부품을 제공한다. 전자 부품용 금속 재료는, 기재와, 기재 상에 형성된, Ni, Cr, Mn, Fe, Co 및 Cu 로 이루어지는 군인 A 구성 원소군에서 선택된 1 종 또는 2 종 이상으로 구성된 하층과, 하층 상에 형성된, Ag, Au, Pt, Pd, Ru, Rh, Os 및 Ir 로 이루어지는 군인 B 구성 원소군에서 선택된 1 종 또는 2 종류 이상과, Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 합금이 구성된 중층과, 중층 상에 형성된 Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 구성된 상층을 구비하고, 하층의 두께가 0.05 ㎛ 이상 5.00 ㎛ 미만이고, 중층의 두께가 0.02 ㎛ 이상 0.80 ㎛ 미만이고, 상층의 두께가 0.005 ㎛ 이상 0.30 ㎛ 미만이다.
The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.02 µm or more and less than 0.80 µm; and the thickness of the upper layer is 0.005 µm or more and less than 0.30 µm.</description><language>eng ; kor</language><subject>ALLOYS ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150515&DB=EPODOC&CC=KR&NR=20150053264A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150515&DB=EPODOC&CC=KR&NR=20150053264A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KODAMA ATSUSHI</creatorcontrib><creatorcontrib>SHIBUYA YOSHITAKA</creatorcontrib><creatorcontrib>FUKAMACHI KAZUHIKO</creatorcontrib><title>ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL</title><description>저위스커성, 저응착 마모성 및 고내구성을 갖는 전자 부품용 금속 재료, 그것을 사용한 커넥터 단자, 커넥터 및 전자 부품을 제공한다. 전자 부품용 금속 재료는, 기재와, 기재 상에 형성된, Ni, Cr, Mn, Fe, Co 및 Cu 로 이루어지는 군인 A 구성 원소군에서 선택된 1 종 또는 2 종 이상으로 구성된 하층과, 하층 상에 형성된, Ag, Au, Pt, Pd, Ru, Rh, Os 및 Ir 로 이루어지는 군인 B 구성 원소군에서 선택된 1 종 또는 2 종류 이상과, Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 합금이 구성된 중층과, 중층 상에 형성된 Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 구성된 상층을 구비하고, 하층의 두께가 0.05 ㎛ 이상 5.00 ㎛ 미만이고, 중층의 두께가 0.02 ㎛ 이상 0.80 ㎛ 미만이고, 상층의 두께가 0.005 ㎛ 이상 0.30 ㎛ 미만이다.
The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.02 µm or more and less than 0.80 µm; and the thickness of the upper layer is 0.005 µm or more and less than 0.30 µm.</description><subject>ALLOYS</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFjv6uPqHBLk7-fprODs7xvg7-fqF6Lg6xri6KPg6xjiGuQJZDj6uQA5fqFujs4hoUGefu4gBR7-LgohHq5Brv5uOmAVzv5-fkCz_IMUgNp8Pf0cfXSQxEAqsNoVGgwyMNjRE4c8qlt4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakm8d5CRgaGpgYGpsZGZiaMxcaoA4zRKCw</recordid><startdate>20150515</startdate><enddate>20150515</enddate><creator>KODAMA ATSUSHI</creator><creator>SHIBUYA YOSHITAKA</creator><creator>FUKAMACHI KAZUHIKO</creator><scope>EVB</scope></search><sort><creationdate>20150515</creationdate><title>ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL</title><author>KODAMA ATSUSHI ; SHIBUYA YOSHITAKA ; FUKAMACHI KAZUHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20150053264A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2015</creationdate><topic>ALLOYS</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>KODAMA ATSUSHI</creatorcontrib><creatorcontrib>SHIBUYA YOSHITAKA</creatorcontrib><creatorcontrib>FUKAMACHI KAZUHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KODAMA ATSUSHI</au><au>SHIBUYA YOSHITAKA</au><au>FUKAMACHI KAZUHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL</title><date>2015-05-15</date><risdate>2015</risdate><abstract>저위스커성, 저응착 마모성 및 고내구성을 갖는 전자 부품용 금속 재료, 그것을 사용한 커넥터 단자, 커넥터 및 전자 부품을 제공한다. 전자 부품용 금속 재료는, 기재와, 기재 상에 형성된, Ni, Cr, Mn, Fe, Co 및 Cu 로 이루어지는 군인 A 구성 원소군에서 선택된 1 종 또는 2 종 이상으로 구성된 하층과, 하층 상에 형성된, Ag, Au, Pt, Pd, Ru, Rh, Os 및 Ir 로 이루어지는 군인 B 구성 원소군에서 선택된 1 종 또는 2 종류 이상과, Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 합금이 구성된 중층과, 중층 상에 형성된 Sn 및 In 으로 이루어지는 군인 C 구성 원소군에서 선택된 1 종 또는 2 종으로 구성된 상층을 구비하고, 하층의 두께가 0.05 ㎛ 이상 5.00 ㎛ 미만이고, 중층의 두께가 0.02 ㎛ 이상 0.80 ㎛ 미만이고, 상층의 두께가 0.005 ㎛ 이상 0.30 ㎛ 미만이다.
The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.02 µm or more and less than 0.80 µm; and the thickness of the upper layer is 0.005 µm or more and less than 0.30 µm.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20150053264A |
| source | esp@cenet |
| subjects | ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | ELECTRONIC COMPONENT METAL MATERIAL AND MANUFACTURING METHOD THEREOF, AND CONNECTOR TERMINAL, CONNECTOR AND ELECTRONIC COMPONENT USING SAID ELECTRONIC COMPONENT METAL MATERIAL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T23%3A23%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KODAMA%20ATSUSHI&rft.date=2015-05-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20150053264A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |