SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

Provided is a manufacturing method of a semiconductor device. The manufacturing method comprises: successively forming a first sacrificial film, a first insulating film, and a second sacrificial film on a substrate; defining an opening part to expose a portion of the substrate to the outside by patterning the second sacrificial film, the first insulating film, and the first sacrificial film, and forming first sacrificial patterns, capping patterns, and second sacrificial patterns successively arranged on the substrate; forming a second insulating film along the profile of the substrate having the opening part; forming spacers on the side walls of the first sacrificial patterns by etching the second insulating film and the second sacrificial patterns while removing the second sacrificial patterns; forming distribution patterns for filling the formed opening part by the spacers; and vaporizing the first sacrificial patterns.