IMPROVED EPITAXIAL GROWTH BETWEEN GATES

IMPROVED EPITAXIAL GROWTH BETWEEN GATES

An integrated circuit device comprises at least two active areas with epitaxial growth, and the active areas are arranged between two gate devices. The integrated circuit device additionally comprises at least one dummy gate between two active areas with epitaxial growth. The length of each active a...

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Hauptverfasser: TSENG JEN CHOU, LIN WUN JIE, SONG MING HSIANG
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TSENG JEN CHOU
LIN WUN JIE
SONG MING HSIANG
description An integrated circuit device comprises at least two active areas with epitaxial growth, and the active areas are arranged between two gate devices. The integrated circuit device additionally comprises at least one dummy gate between two active areas with epitaxial growth. The length of each active area is practically identical.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title IMPROVED EPITAXIAL GROWTH BETWEEN GATES
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