APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON

There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in...

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Hauptverfasser: KIM, KEUN HO, KIM, TED, JUNG, YUN SUB, YOON, YEO KYUN
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Sprache:eng ; kor
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creator KIM, KEUN HO
KIM, TED
JUNG, YUN SUB
YOON, YEO KYUN
description There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in the reaction pipe, a sensing unit configured to output level information based on the height of a fluidized bed which is changeable according to the growth of the polycrystal silicon, and a particle outlet configured to exhaust the polycrystal silicon formed in the reaction pipe outside, when the height of the fluidized bed corresponding to the level information is larger than an exhaustion start height of the fluidized bed corresponding to a start level.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140092193A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140092193A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140092193A3</originalsourceid><addsrcrecordid>eNrjZDB2DAhwDHIMCQ1WcPMPUvB19At1c3QOCQ3y9HNXCPD3iXQOigwOcfTx8fRzVQj29PF09vfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBoYmBgaWRoaWxo7GxKkCAHl-KH8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON</title><source>esp@cenet</source><creator>KIM, KEUN HO ; KIM, TED ; JUNG, YUN SUB ; YOON, YEO KYUN</creator><creatorcontrib>KIM, KEUN HO ; KIM, TED ; JUNG, YUN SUB ; YOON, YEO KYUN</creatorcontrib><description>There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in the reaction pipe, a sensing unit configured to output level information based on the height of a fluidized bed which is changeable according to the growth of the polycrystal silicon, and a particle outlet configured to exhaust the polycrystal silicon formed in the reaction pipe outside, when the height of the fluidized bed corresponding to the level information is larger than an exhaustion start height of the fluidized bed corresponding to a start level.</description><language>eng ; kor</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140723&amp;DB=EPODOC&amp;CC=KR&amp;NR=20140092193A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20140723&amp;DB=EPODOC&amp;CC=KR&amp;NR=20140092193A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, KEUN HO</creatorcontrib><creatorcontrib>KIM, TED</creatorcontrib><creatorcontrib>JUNG, YUN SUB</creatorcontrib><creatorcontrib>YOON, YEO KYUN</creatorcontrib><title>APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON</title><description>There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in the reaction pipe, a sensing unit configured to output level information based on the height of a fluidized bed which is changeable according to the growth of the polycrystal silicon, and a particle outlet configured to exhaust the polycrystal silicon formed in the reaction pipe outside, when the height of the fluidized bed corresponding to the level information is larger than an exhaustion start height of the fluidized bed corresponding to a start level.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2DAhwDHIMCQ1WcPMPUvB19At1c3QOCQ3y9HNXCPD3iXQOigwOcfTx8fRzVQj29PF09vfjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBoYmBgaWRoaWxo7GxKkCAHl-KH8</recordid><startdate>20140723</startdate><enddate>20140723</enddate><creator>KIM, KEUN HO</creator><creator>KIM, TED</creator><creator>JUNG, YUN SUB</creator><creator>YOON, YEO KYUN</creator><scope>EVB</scope></search><sort><creationdate>20140723</creationdate><title>APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON</title><author>KIM, KEUN HO ; KIM, TED ; JUNG, YUN SUB ; YOON, YEO KYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140092193A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, KEUN HO</creatorcontrib><creatorcontrib>KIM, TED</creatorcontrib><creatorcontrib>JUNG, YUN SUB</creatorcontrib><creatorcontrib>YOON, YEO KYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, KEUN HO</au><au>KIM, TED</au><au>JUNG, YUN SUB</au><au>YOON, YEO KYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON</title><date>2014-07-23</date><risdate>2014</risdate><abstract>There is disclosed a polycrystal silicon manufacturing apparatus including a reaction pipe configured to provide a reaction space where seed silicon grows into polycrystal silicon, a flowing-gas supply unit configured to supply flowing gas to the seed silicon and the polycrystal silicon provided in the reaction pipe, a sensing unit configured to output level information based on the height of a fluidized bed which is changeable according to the growth of the polycrystal silicon, and a particle outlet configured to exhaust the polycrystal silicon formed in the reaction pipe outside, when the height of the fluidized bed corresponding to the level information is larger than an exhaustion start height of the fluidized bed corresponding to a start level.</abstract><oa>free_for_read</oa></addata></record>
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subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON
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