SCANNER OVERLAY CORRECTION SYSTEM AND METHOD
A scanner overlay correction method of the present invention includes a step of performing a semiconductor manufacturing process on a plurality of substrates. The substrates are divided into a first sub-set and a second sub-set. A rework process is performed on the second sub-set of the substrates i...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TSEN YEN DI LU SHIN RUNG MOU JONG I |
| description | A scanner overlay correction method of the present invention includes a step of performing a semiconductor manufacturing process on a plurality of substrates. The substrates are divided into a first sub-set and a second sub-set. A rework process is performed on the second sub-set of the substrates instead of the first sub-set. Each average value of at least one exposure parameter for a lithographic process is calculated for each of the first sub-set and the second sub-set of the substrates. Scanner overlay correction and average correction are applied to expose a plurality of second substrates in which the rework process is performed. The average correction is applied based on a calculated average value. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140078512A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140078512A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140078512A3</originalsourceid><addsrcrecordid>eNrjZNAJdnb083MNUvAPcw3ycYxUcPYPCnJ1DvH091MIjgwOcfVVcPRzUfB1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhiYGBuYWpoZGjsbEqQIAPQQmKA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SCANNER OVERLAY CORRECTION SYSTEM AND METHOD</title><source>esp@cenet</source><creator>TSEN YEN DI ; LU SHIN RUNG ; MOU JONG I</creator><creatorcontrib>TSEN YEN DI ; LU SHIN RUNG ; MOU JONG I</creatorcontrib><description>A scanner overlay correction method of the present invention includes a step of performing a semiconductor manufacturing process on a plurality of substrates. The substrates are divided into a first sub-set and a second sub-set. A rework process is performed on the second sub-set of the substrates instead of the first sub-set. Each average value of at least one exposure parameter for a lithographic process is calculated for each of the first sub-set and the second sub-set of the substrates. Scanner overlay correction and average correction are applied to expose a plurality of second substrates in which the rework process is performed. The average correction is applied based on a calculated average value.</description><language>eng ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140625&DB=EPODOC&CC=KR&NR=20140078512A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140625&DB=EPODOC&CC=KR&NR=20140078512A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSEN YEN DI</creatorcontrib><creatorcontrib>LU SHIN RUNG</creatorcontrib><creatorcontrib>MOU JONG I</creatorcontrib><title>SCANNER OVERLAY CORRECTION SYSTEM AND METHOD</title><description>A scanner overlay correction method of the present invention includes a step of performing a semiconductor manufacturing process on a plurality of substrates. The substrates are divided into a first sub-set and a second sub-set. A rework process is performed on the second sub-set of the substrates instead of the first sub-set. Each average value of at least one exposure parameter for a lithographic process is calculated for each of the first sub-set and the second sub-set of the substrates. Scanner overlay correction and average correction are applied to expose a plurality of second substrates in which the rework process is performed. The average correction is applied based on a calculated average value.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAJdnb083MNUvAPcw3ycYxUcPYPCnJ1DvH091MIjgwOcfVVcPRzUfB1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhiYGBuYWpoZGjsbEqQIAPQQmKA</recordid><startdate>20140625</startdate><enddate>20140625</enddate><creator>TSEN YEN DI</creator><creator>LU SHIN RUNG</creator><creator>MOU JONG I</creator><scope>EVB</scope></search><sort><creationdate>20140625</creationdate><title>SCANNER OVERLAY CORRECTION SYSTEM AND METHOD</title><author>TSEN YEN DI ; LU SHIN RUNG ; MOU JONG I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140078512A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TSEN YEN DI</creatorcontrib><creatorcontrib>LU SHIN RUNG</creatorcontrib><creatorcontrib>MOU JONG I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSEN YEN DI</au><au>LU SHIN RUNG</au><au>MOU JONG I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SCANNER OVERLAY CORRECTION SYSTEM AND METHOD</title><date>2014-06-25</date><risdate>2014</risdate><abstract>A scanner overlay correction method of the present invention includes a step of performing a semiconductor manufacturing process on a plurality of substrates. The substrates are divided into a first sub-set and a second sub-set. A rework process is performed on the second sub-set of the substrates instead of the first sub-set. Each average value of at least one exposure parameter for a lithographic process is calculated for each of the first sub-set and the second sub-set of the substrates. Scanner overlay correction and average correction are applied to expose a plurality of second substrates in which the rework process is performed. The average correction is applied based on a calculated average value.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20140078512A |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | SCANNER OVERLAY CORRECTION SYSTEM AND METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T01%3A14%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSEN%20YEN%20DI&rft.date=2014-06-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20140078512A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |