SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not...
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| creator | KUSANO EIJI SATO AKISHIGE ARAHORI TADAHISA OKAMOTO KEN SAKAMOTO MUNEAKI MIYASHITA SACHIO |
| description | A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20140073571A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20140073571A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20140073571A3</originalsourceid><addsrcrecordid>eNrjZNAPDggNCXEN8vRzVwhxDHJ3DVFw9HNR8HUN8fB3UXDzD1IICPJ3CXUGyQc7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MTAwNzY1NzQ0dj4lQBAKI5JtY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><source>esp@cenet</source><creator>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</creator><creatorcontrib>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</creatorcontrib><description>A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.</description><language>eng ; kor</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CASTING ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LIME, MAGNESIA ; MAKING METALLIC POWDER ; MANUFACTURE OF ARTICLES FROM METALLIC POWDER ; METALLURGY ; PERFORMING OPERATIONS ; POWDER METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TREATMENT OF NATURAL STONE ; WORKING METALLIC POWDER</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140616&DB=EPODOC&CC=KR&NR=20140073571A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140616&DB=EPODOC&CC=KR&NR=20140073571A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUSANO EIJI</creatorcontrib><creatorcontrib>SATO AKISHIGE</creatorcontrib><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><creatorcontrib>SAKAMOTO MUNEAKI</creatorcontrib><creatorcontrib>MIYASHITA SACHIO</creatorcontrib><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><description>A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CASTING</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LIME, MAGNESIA</subject><subject>MAKING METALLIC POWDER</subject><subject>MANUFACTURE OF ARTICLES FROM METALLIC POWDER</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>POWDER METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TREATMENT OF NATURAL STONE</subject><subject>WORKING METALLIC POWDER</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAPDggNCXEN8vRzVwhxDHJ3DVFw9HNR8HUN8fB3UXDzD1IICPJ3CXUGyQc7-rryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JJ47yAjA0MTAwNzY1NzQ0dj4lQBAKI5JtY</recordid><startdate>20140616</startdate><enddate>20140616</enddate><creator>KUSANO EIJI</creator><creator>SATO AKISHIGE</creator><creator>ARAHORI TADAHISA</creator><creator>OKAMOTO KEN</creator><creator>SAKAMOTO MUNEAKI</creator><creator>MIYASHITA SACHIO</creator><scope>EVB</scope></search><sort><creationdate>20140616</creationdate><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><author>KUSANO EIJI ; SATO AKISHIGE ; ARAHORI TADAHISA ; OKAMOTO KEN ; SAKAMOTO MUNEAKI ; MIYASHITA SACHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20140073571A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2014</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CASTING</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LIME, MAGNESIA</topic><topic>MAKING METALLIC POWDER</topic><topic>MANUFACTURE OF ARTICLES FROM METALLIC POWDER</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>POWDER METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TREATMENT OF NATURAL STONE</topic><topic>WORKING METALLIC POWDER</topic><toplevel>online_resources</toplevel><creatorcontrib>KUSANO EIJI</creatorcontrib><creatorcontrib>SATO AKISHIGE</creatorcontrib><creatorcontrib>ARAHORI TADAHISA</creatorcontrib><creatorcontrib>OKAMOTO KEN</creatorcontrib><creatorcontrib>SAKAMOTO MUNEAKI</creatorcontrib><creatorcontrib>MIYASHITA SACHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUSANO EIJI</au><au>SATO AKISHIGE</au><au>ARAHORI TADAHISA</au><au>OKAMOTO KEN</au><au>SAKAMOTO MUNEAKI</au><au>MIYASHITA SACHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTERING TARGET AND METHOD FOR PRODUCING SAME</title><date>2014-06-16</date><risdate>2014</risdate><abstract>A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; kor |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CASTING CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF NATURAL STONE WORKING METALLIC POWDER |
| title | SPUTTERING TARGET AND METHOD FOR PRODUCING SAME |
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