APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY
PURPOSE: A yield estimating method of a static RAM and a yield estimating device of the static RAM are provided to accurately calculate the probability of failure of the reading/writing operation, thereby accurately estimating the yield of the static RAM. CONSTITUTION: A noise source (VN1) is formed...
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creator | JUNG, SEONG OOK YANG, YOUNG HWI JEONG, HAN WOOL LEE, JUN HA KIM, JI SU |
description | PURPOSE: A yield estimating method of a static RAM and a yield estimating device of the static RAM are provided to accurately calculate the probability of failure of the reading/writing operation, thereby accurately estimating the yield of the static RAM. CONSTITUTION: A noise source (VN1) is formed between one storage node (Na) among two storage nodes which stores the data of a bit cell (110) and an input terminal (Nd) of a first inverter of the bit cell. A metric measuring unit (120) measures the voltage of the noise source in which the data of bit cell is flipped by sweeping the voltage of the noise source, thereby measuring the read stability metric. In the interval of the other storage node among the two nodes and the input terminal of the other inverter among the two inverters, the noise voltage is not applied. [Reference numerals] (120) Metric measuring unit; (130) Yield estimation unit |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20130085917A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20130085917A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20130085917A3</originalsourceid><addsrcrecordid>eNrjZPB1DAhwDHIMCQ1WcPRzUfB1DfHwd1Fw8w9ScA0O8fR1DPH0cwfKKER6uvq4KPi7KTgqBIcARZ0VgoDq_X0VHJ2dXYODgRp9_YMieRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGhsYGBhamlobmjMXGqAGcSLqk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY</title><source>esp@cenet</source><creator>JUNG, SEONG OOK ; YANG, YOUNG HWI ; JEONG, HAN WOOL ; LEE, JUN HA ; KIM, JI SU</creator><creatorcontrib>JUNG, SEONG OOK ; YANG, YOUNG HWI ; JEONG, HAN WOOL ; LEE, JUN HA ; KIM, JI SU</creatorcontrib><description>PURPOSE: A yield estimating method of a static RAM and a yield estimating device of the static RAM are provided to accurately calculate the probability of failure of the reading/writing operation, thereby accurately estimating the yield of the static RAM. CONSTITUTION: A noise source (VN1) is formed between one storage node (Na) among two storage nodes which stores the data of a bit cell (110) and an input terminal (Nd) of a first inverter of the bit cell. A metric measuring unit (120) measures the voltage of the noise source in which the data of bit cell is flipped by sweeping the voltage of the noise source, thereby measuring the read stability metric. In the interval of the other storage node among the two nodes and the input terminal of the other inverter among the two inverters, the noise voltage is not applied. [Reference numerals] (120) Metric measuring unit; (130) Yield estimation unit</description><language>eng ; kor</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130730&DB=EPODOC&CC=KR&NR=20130085917A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130730&DB=EPODOC&CC=KR&NR=20130085917A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUNG, SEONG OOK</creatorcontrib><creatorcontrib>YANG, YOUNG HWI</creatorcontrib><creatorcontrib>JEONG, HAN WOOL</creatorcontrib><creatorcontrib>LEE, JUN HA</creatorcontrib><creatorcontrib>KIM, JI SU</creatorcontrib><title>APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY</title><description>PURPOSE: A yield estimating method of a static RAM and a yield estimating device of the static RAM are provided to accurately calculate the probability of failure of the reading/writing operation, thereby accurately estimating the yield of the static RAM. CONSTITUTION: A noise source (VN1) is formed between one storage node (Na) among two storage nodes which stores the data of a bit cell (110) and an input terminal (Nd) of a first inverter of the bit cell. A metric measuring unit (120) measures the voltage of the noise source in which the data of bit cell is flipped by sweeping the voltage of the noise source, thereby measuring the read stability metric. In the interval of the other storage node among the two nodes and the input terminal of the other inverter among the two inverters, the noise voltage is not applied. [Reference numerals] (120) Metric measuring unit; (130) Yield estimation unit</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB1DAhwDHIMCQ1WcPRzUfB1DfHwd1Fw8w9ScA0O8fR1DPH0cwfKKER6uvq4KPi7KTgqBIcARZ0VgoDq_X0VHJ2dXYODgRp9_YMieRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJvHeQkYGhsYGBhamlobmjMXGqAGcSLqk</recordid><startdate>20130730</startdate><enddate>20130730</enddate><creator>JUNG, SEONG OOK</creator><creator>YANG, YOUNG HWI</creator><creator>JEONG, HAN WOOL</creator><creator>LEE, JUN HA</creator><creator>KIM, JI SU</creator><scope>EVB</scope></search><sort><creationdate>20130730</creationdate><title>APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY</title><author>JUNG, SEONG OOK ; YANG, YOUNG HWI ; JEONG, HAN WOOL ; LEE, JUN HA ; KIM, JI SU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20130085917A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2013</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG, SEONG OOK</creatorcontrib><creatorcontrib>YANG, YOUNG HWI</creatorcontrib><creatorcontrib>JEONG, HAN WOOL</creatorcontrib><creatorcontrib>LEE, JUN HA</creatorcontrib><creatorcontrib>KIM, JI SU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUNG, SEONG OOK</au><au>YANG, YOUNG HWI</au><au>JEONG, HAN WOOL</au><au>LEE, JUN HA</au><au>KIM, JI SU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY</title><date>2013-07-30</date><risdate>2013</risdate><abstract>PURPOSE: A yield estimating method of a static RAM and a yield estimating device of the static RAM are provided to accurately calculate the probability of failure of the reading/writing operation, thereby accurately estimating the yield of the static RAM. CONSTITUTION: A noise source (VN1) is formed between one storage node (Na) among two storage nodes which stores the data of a bit cell (110) and an input terminal (Nd) of a first inverter of the bit cell. A metric measuring unit (120) measures the voltage of the noise source in which the data of bit cell is flipped by sweeping the voltage of the noise source, thereby measuring the read stability metric. In the interval of the other storage node among the two nodes and the input terminal of the other inverter among the two inverters, the noise voltage is not applied. [Reference numerals] (120) Metric measuring unit; (130) Yield estimation unit</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
title | APPARATUS AND METHOD FOR ESTIMATING AN YIELD OF A STATIC RANDOM ACCESS MEMORY |
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