SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
PURPOSE: Semiconductor device and operation method thereof are provided to reduce current consumption by controlling voltage applied to a selected transistor. CONSTITUTION: Positive voltage is applied to bit line, drain selection line (DSL) and source selection line (SSL) and ground voltage is appli...
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| creator | JEON, YOO NAM LEE, HEE JIN IM, U SEON BAIK, SEUNG HWAN KIM, JAE SEOK LIM, CHAE MOON AHN, SANG TAE CHO, GYU SEOG MUN, KYUNG SIK |
| description | PURPOSE: Semiconductor device and operation method thereof are provided to reduce current consumption by controlling voltage applied to a selected transistor. CONSTITUTION: Positive voltage is applied to bit line, drain selection line (DSL) and source selection line (SSL) and ground voltage is applied to a common source line (CSL). Switch voltage (Voff) is applied to a switch word line (WLm-1) to turn off a switch cell and program voltage (Vpgm) is applied to the selected word line. First pass voltage is applied to first non-selected word lines in between the switch word line and source selection line and between the selected word line and drain selection line. Second pass voltage is applied in between the switch word line and the selected word line. Hot electron is generated by increasing the switch voltage and the hot electron is injected into a selected cell of the selected word line. [Reference numerals] (AA) Program cell |
| format | Patent |
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CONSTITUTION: Positive voltage is applied to bit line, drain selection line (DSL) and source selection line (SSL) and ground voltage is applied to a common source line (CSL). Switch voltage (Voff) is applied to a switch word line (WLm-1) to turn off a switch cell and program voltage (Vpgm) is applied to the selected word line. First pass voltage is applied to first non-selected word lines in between the switch word line and source selection line and between the selected word line and drain selection line. Second pass voltage is applied in between the switch word line and the selected word line. Hot electron is generated by increasing the switch voltage and the hot electron is injected into a selected cell of the selected word line. 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CONSTITUTION: Positive voltage is applied to bit line, drain selection line (DSL) and source selection line (SSL) and ground voltage is applied to a common source line (CSL). Switch voltage (Voff) is applied to a switch word line (WLm-1) to turn off a switch cell and program voltage (Vpgm) is applied to the selected word line. First pass voltage is applied to first non-selected word lines in between the switch word line and source selection line and between the selected word line and drain selection line. Second pass voltage is applied in between the switch word line and the selected word line. Hot electron is generated by increasing the switch voltage and the hot electron is injected into a selected cell of the selected word line. [Reference numerals] (AA) Program cell</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
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