HIGH FREQUENCY POWER SUPPLY DEVICE
PURPOSE: A high frequency power supply device is provided to prevent a change generation in the mean value of high frequency power in case a high frequency power is supplied as a load in a different high frequency power supply device and prevent the degradation of an output control through the perfo...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | UMEHARA MASAO HAMAISHI SATORU MAEHARA DAISUKE IKENARI TATSUYA NAKAMORI YUYA |
| description | PURPOSE: A high frequency power supply device is provided to prevent a change generation in the mean value of high frequency power in case a high frequency power is supplied as a load in a different high frequency power supply device and prevent the degradation of an output control through the performance of the output control for evenly maintaining the mean value of high frequency power. CONSTITUTION: A high frequency power supply device includes a high frequency power generating unit(4) comprised in order to output a high frequency power for supplying to a load; a high frequency power detecting unit(801) detecting the mean value of high frequency power which is a control object in the output side of the high frequency power generating unit; an activation amount calculating unit(802) comprised in order to calculate an activation amount for maintaining the detected mean value of high frequency power in a set value; and a control part(8) including a control signal output unit(803) comprised in order to output a control signal given to the high frequency power generating unit. [Reference numerals] (1) Commercial power supply; (10) Power change period detecting unit; (11) Control period setting means; (2) DC power supply unit; (20) Different frequency power supply source; (201) Rectifier circuit; (202) Inverter; (203) Rectifier and smoothing circuit; (3) High frequency power amplifying unit; (4) High frequency power generating unit; (5) Directional coupler; (6) Impedance matching unit; (7) Load; (8) Control part; (801) High frequency power detecting unit; (802) Duty ratio calculating unit(activation amount calculating unit); (803) Control signal output unit; (804) Timing controller; (AA) Power setting value; |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20130035887A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20130035887A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20130035887A3</originalsourceid><addsrcrecordid>eNrjZFDy8HT3UHALcg0MdfVzjlQI8A93DVIIDg0I8IlUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgaGxgYGxqYWFuaOxsSpAgDJJSNr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>HIGH FREQUENCY POWER SUPPLY DEVICE</title><source>esp@cenet</source><creator>UMEHARA MASAO ; HAMAISHI SATORU ; MAEHARA DAISUKE ; IKENARI TATSUYA ; NAKAMORI YUYA</creator><creatorcontrib>UMEHARA MASAO ; HAMAISHI SATORU ; MAEHARA DAISUKE ; IKENARI TATSUYA ; NAKAMORI YUYA</creatorcontrib><description>PURPOSE: A high frequency power supply device is provided to prevent a change generation in the mean value of high frequency power in case a high frequency power is supplied as a load in a different high frequency power supply device and prevent the degradation of an output control through the performance of the output control for evenly maintaining the mean value of high frequency power. CONSTITUTION: A high frequency power supply device includes a high frequency power generating unit(4) comprised in order to output a high frequency power for supplying to a load; a high frequency power detecting unit(801) detecting the mean value of high frequency power which is a control object in the output side of the high frequency power generating unit; an activation amount calculating unit(802) comprised in order to calculate an activation amount for maintaining the detected mean value of high frequency power in a set value; and a control part(8) including a control signal output unit(803) comprised in order to output a control signal given to the high frequency power generating unit. [Reference numerals] (1) Commercial power supply; (10) Power change period detecting unit; (11) Control period setting means; (2) DC power supply unit; (20) Different frequency power supply source; (201) Rectifier circuit; (202) Inverter; (203) Rectifier and smoothing circuit; (3) High frequency power amplifying unit; (4) High frequency power generating unit; (5) Directional coupler; (6) Impedance matching unit; (7) Load; (8) Control part; (801) High frequency power detecting unit; (802) Duty ratio calculating unit(activation amount calculating unit); (803) Control signal output unit; (804) Timing controller; (AA) Power setting value;</description><language>eng ; kor</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130409&DB=EPODOC&CC=KR&NR=20130035887A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130409&DB=EPODOC&CC=KR&NR=20130035887A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMEHARA MASAO</creatorcontrib><creatorcontrib>HAMAISHI SATORU</creatorcontrib><creatorcontrib>MAEHARA DAISUKE</creatorcontrib><creatorcontrib>IKENARI TATSUYA</creatorcontrib><creatorcontrib>NAKAMORI YUYA</creatorcontrib><title>HIGH FREQUENCY POWER SUPPLY DEVICE</title><description>PURPOSE: A high frequency power supply device is provided to prevent a change generation in the mean value of high frequency power in case a high frequency power is supplied as a load in a different high frequency power supply device and prevent the degradation of an output control through the performance of the output control for evenly maintaining the mean value of high frequency power. CONSTITUTION: A high frequency power supply device includes a high frequency power generating unit(4) comprised in order to output a high frequency power for supplying to a load; a high frequency power detecting unit(801) detecting the mean value of high frequency power which is a control object in the output side of the high frequency power generating unit; an activation amount calculating unit(802) comprised in order to calculate an activation amount for maintaining the detected mean value of high frequency power in a set value; and a control part(8) including a control signal output unit(803) comprised in order to output a control signal given to the high frequency power generating unit. [Reference numerals] (1) Commercial power supply; (10) Power change period detecting unit; (11) Control period setting means; (2) DC power supply unit; (20) Different frequency power supply source; (201) Rectifier circuit; (202) Inverter; (203) Rectifier and smoothing circuit; (3) High frequency power amplifying unit; (4) High frequency power generating unit; (5) Directional coupler; (6) Impedance matching unit; (7) Load; (8) Control part; (801) High frequency power detecting unit; (802) Duty ratio calculating unit(activation amount calculating unit); (803) Control signal output unit; (804) Timing controller; (AA) Power setting value;</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDy8HT3UHALcg0MdfVzjlQI8A93DVIIDg0I8IlUcHEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgaGxgYGxqYWFuaOxsSpAgDJJSNr</recordid><startdate>20130409</startdate><enddate>20130409</enddate><creator>UMEHARA MASAO</creator><creator>HAMAISHI SATORU</creator><creator>MAEHARA DAISUKE</creator><creator>IKENARI TATSUYA</creator><creator>NAKAMORI YUYA</creator><scope>EVB</scope></search><sort><creationdate>20130409</creationdate><title>HIGH FREQUENCY POWER SUPPLY DEVICE</title><author>UMEHARA MASAO ; HAMAISHI SATORU ; MAEHARA DAISUKE ; IKENARI TATSUYA ; NAKAMORI YUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20130035887A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2013</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>UMEHARA MASAO</creatorcontrib><creatorcontrib>HAMAISHI SATORU</creatorcontrib><creatorcontrib>MAEHARA DAISUKE</creatorcontrib><creatorcontrib>IKENARI TATSUYA</creatorcontrib><creatorcontrib>NAKAMORI YUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMEHARA MASAO</au><au>HAMAISHI SATORU</au><au>MAEHARA DAISUKE</au><au>IKENARI TATSUYA</au><au>NAKAMORI YUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH FREQUENCY POWER SUPPLY DEVICE</title><date>2013-04-09</date><risdate>2013</risdate><abstract>PURPOSE: A high frequency power supply device is provided to prevent a change generation in the mean value of high frequency power in case a high frequency power is supplied as a load in a different high frequency power supply device and prevent the degradation of an output control through the performance of the output control for evenly maintaining the mean value of high frequency power. CONSTITUTION: A high frequency power supply device includes a high frequency power generating unit(4) comprised in order to output a high frequency power for supplying to a load; a high frequency power detecting unit(801) detecting the mean value of high frequency power which is a control object in the output side of the high frequency power generating unit; an activation amount calculating unit(802) comprised in order to calculate an activation amount for maintaining the detected mean value of high frequency power in a set value; and a control part(8) including a control signal output unit(803) comprised in order to output a control signal given to the high frequency power generating unit. [Reference numerals] (1) Commercial power supply; (10) Power change period detecting unit; (11) Control period setting means; (2) DC power supply unit; (20) Different frequency power supply source; (201) Rectifier circuit; (202) Inverter; (203) Rectifier and smoothing circuit; (3) High frequency power amplifying unit; (4) High frequency power generating unit; (5) Directional coupler; (6) Impedance matching unit; (7) Load; (8) Control part; (801) High frequency power detecting unit; (802) Duty ratio calculating unit(activation amount calculating unit); (803) Control signal output unit; (804) Timing controller; (AA) Power setting value;</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20130035887A |
| source | esp@cenet |
| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | HIGH FREQUENCY POWER SUPPLY DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T19%3A20%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=UMEHARA%20MASAO&rft.date=2013-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20130035887A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |