APPARATUS FOR ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION
PURPOSE: An apparatus for atmospheric pressure chemical vapor deposition is provided to accurately control a semiconductor device or a thickness of a semiconductor film(TCO) by including a first gas injecting hole and a second gas injecting hole in both sides of a compound injecting hole. CONSTITUTI...
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| creator | KWON, MUN HO KIM, BYUNG KUK KIM, HYOUNG JUNE KIM, MIN KYU KIM, YU SEUNG |
| description | PURPOSE: An apparatus for atmospheric pressure chemical vapor deposition is provided to accurately control a semiconductor device or a thickness of a semiconductor film(TCO) by including a first gas injecting hole and a second gas injecting hole in both sides of a compound injecting hole. CONSTITUTION: A reaction gas discharge unit is formed in both sides of an injector unit. The injector unit comprises a receiving unit and an injecting unit(120). The receiving unit includes a plurality of distribution pipes which distributes compound gas and reaction gas. The injecting unit is formed in a lower portion of the receiving unit, includes a plurality of layers which the compound gas and the reaction gas pass through, and injects the compound gas and the reaction gas on an upper side of a semiconductor device. A compound injection hole(113), first reaction gas holes(112, 114), and second gas injecting holes(111, 115) are included inside the injecting unit. |
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CONSTITUTION: A reaction gas discharge unit is formed in both sides of an injector unit. The injector unit comprises a receiving unit and an injecting unit(120). The receiving unit includes a plurality of distribution pipes which distributes compound gas and reaction gas. The injecting unit is formed in a lower portion of the receiving unit, includes a plurality of layers which the compound gas and the reaction gas pass through, and injects the compound gas and the reaction gas on an upper side of a semiconductor device. A compound injection hole(113), first reaction gas holes(112, 114), and second gas injecting holes(111, 115) are included inside the injecting unit.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121023&DB=EPODOC&CC=KR&NR=20120116683A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121023&DB=EPODOC&CC=KR&NR=20120116683A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, MUN HO</creatorcontrib><creatorcontrib>KIM, BYUNG KUK</creatorcontrib><creatorcontrib>KIM, HYOUNG JUNE</creatorcontrib><creatorcontrib>KIM, MIN KYU</creatorcontrib><creatorcontrib>KIM, YU SEUNG</creatorcontrib><title>APPARATUS FOR ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION</title><description>PURPOSE: An apparatus for atmospheric pressure chemical vapor deposition is provided to accurately control a semiconductor device or a thickness of a semiconductor film(TCO) by including a first gas injecting hole and a second gas injecting hole in both sides of a compound injecting hole. CONSTITUTION: A reaction gas discharge unit is formed in both sides of an injector unit. The injector unit comprises a receiving unit and an injecting unit(120). The receiving unit includes a plurality of distribution pipes which distributes compound gas and reaction gas. The injecting unit is formed in a lower portion of the receiving unit, includes a plurality of layers which the compound gas and the reaction gas pass through, and injects the compound gas and the reaction gas on an upper side of a semiconductor device. A compound injection hole(113), first reaction gas holes(112, 114), and second gas injecting holes(111, 115) are included inside the injecting unit.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBxDAhwDHIMCQ1WcPMPUnAM8fUPDvBwDfJ0VggIcg0ODg1yVXD2cPX1dHb0UQhzDACqcXEN8A_2DPH09-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhkBkaGZmYexoTJwqANdmKsc</recordid><startdate>20121023</startdate><enddate>20121023</enddate><creator>KWON, MUN HO</creator><creator>KIM, BYUNG KUK</creator><creator>KIM, HYOUNG JUNE</creator><creator>KIM, MIN KYU</creator><creator>KIM, YU SEUNG</creator><scope>EVB</scope></search><sort><creationdate>20121023</creationdate><title>APPARATUS FOR ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION</title><author>KWON, MUN HO ; KIM, BYUNG KUK ; KIM, HYOUNG JUNE ; KIM, MIN KYU ; KIM, YU SEUNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20120116683A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, MUN HO</creatorcontrib><creatorcontrib>KIM, BYUNG KUK</creatorcontrib><creatorcontrib>KIM, HYOUNG JUNE</creatorcontrib><creatorcontrib>KIM, MIN KYU</creatorcontrib><creatorcontrib>KIM, YU SEUNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, MUN HO</au><au>KIM, BYUNG KUK</au><au>KIM, HYOUNG JUNE</au><au>KIM, MIN KYU</au><au>KIM, YU SEUNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION</title><date>2012-10-23</date><risdate>2012</risdate><abstract>PURPOSE: An apparatus for atmospheric pressure chemical vapor deposition is provided to accurately control a semiconductor device or a thickness of a semiconductor film(TCO) by including a first gas injecting hole and a second gas injecting hole in both sides of a compound injecting hole. CONSTITUTION: A reaction gas discharge unit is formed in both sides of an injector unit. The injector unit comprises a receiving unit and an injecting unit(120). The receiving unit includes a plurality of distribution pipes which distributes compound gas and reaction gas. The injecting unit is formed in a lower portion of the receiving unit, includes a plurality of layers which the compound gas and the reaction gas pass through, and injects the compound gas and the reaction gas on an upper side of a semiconductor device. A compound injection hole(113), first reaction gas holes(112, 114), and second gas injecting holes(111, 115) are included inside the injecting unit.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | APPARATUS FOR ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION |
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