MANUFACTURING METHOD OF THIN FILM TRANSISTOR

PURPOSE: A method for manufacturing a thin film transistor is provided to prevent a band bending in an interface between a protection layer and a channel region of a semiconductor layer by processing the channel region of a semiconductor layer with plasma using gas with III group elements or V group...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHO, YONG SOO, CHOI, YOUNG SEOK, MOON, KYO HO, OH, KWANG SIK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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