SINGLE CRYSTAL GROWTH DEVICE

PURPOSE: An apparatus for growing a single crystal sapphire ingot is provided to grow an ingot at a stable temperature gradient by including a cooling member in a crucible and a chamber. CONSTITUTION: A cooling member(105) comprises an inner chamber(112) and an outer chamber(113). The inner chamber...

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Hauptverfasser:	YUN, AE CHEON, SONG, JAE JUNG, CHO, BEOM RAE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	YUN, AE CHEON SONG, JAE JUNG CHO, BEOM RAE
description	PURPOSE: An apparatus for growing a single crystal sapphire ingot is provided to grow an ingot at a stable temperature gradient by including a cooling member in a crucible and a chamber. CONSTITUTION: A cooling member(105) comprises an inner chamber(112) and an outer chamber(113). The inner chamber is installed near a crucible. The outer chamber is integrated with the outside of the inner chamber. Cooling water reversely circulates in the inner chamber and the outer chamber to reduce temperature difference between the upper side and the lower side of the crucible.
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CONSTITUTION: A cooling member(105) comprises an inner chamber(112) and an outer chamber(113). The inner chamber is installed near a crucible. The outer chamber is integrated with the outside of the inner chamber. 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language	eng ; kor
recordid	cdi_epo_espacenet_KR20120070080A
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	SINGLE CRYSTAL GROWTH DEVICE
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