SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE
A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination r...
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| creator | LEE, JAE GIL SHENOY PRAVEEN MURALEEDHARAN REXER CHRISTOPHER L HIGGS JASON M WANG QI RINEHIMER MARK L YUN, CHONG MAN KIM, YONG SUB KIM, CHANG WOOK LEE, JONG HUN LEE, JUNG KIL YEDINAK JOSEPH A JUNG, JIN YOUNG JANG, HO CHEOL SHARP JOELLE REICHL DWAYNE S |
| description | A power device includes an active region and a termination region surrounding the active region. A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region. |
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A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100721&DB=EPODOC&CC=KR&NR=20100083153A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100721&DB=EPODOC&CC=KR&NR=20100083153A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, JAE GIL</creatorcontrib><creatorcontrib>SHENOY PRAVEEN MURALEEDHARAN</creatorcontrib><creatorcontrib>REXER CHRISTOPHER L</creatorcontrib><creatorcontrib>HIGGS JASON M</creatorcontrib><creatorcontrib>WANG QI</creatorcontrib><creatorcontrib>RINEHIMER MARK L</creatorcontrib><creatorcontrib>YUN, CHONG MAN</creatorcontrib><creatorcontrib>KIM, YONG SUB</creatorcontrib><creatorcontrib>KIM, CHANG WOOK</creatorcontrib><creatorcontrib>LEE, JONG HUN</creatorcontrib><creatorcontrib>LEE, JUNG KIL</creatorcontrib><creatorcontrib>YEDINAK JOSEPH A</creatorcontrib><creatorcontrib>JUNG, JIN YOUNG</creatorcontrib><creatorcontrib>JANG, HO CHEOL</creatorcontrib><creatorcontrib>SHARP JOELLE</creatorcontrib><creatorcontrib>REICHL DWAYNE S</creatorcontrib><title>SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE</title><description>A power device includes an active region and a termination region surrounding the active region. 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A plurality of pillars of first and second conductivity type are alternately arranged in each of the active and termination regions. The pillars of first conductivity type in the active and termination regions have substantially the same width, and the pillars of second conductivity type in the active region have a smaller width than the pillars of second conductivity type in the termination region so that a charge balance condition in each of the active and termination regions results in a higher breakdown voltage in the termination region than in the active region.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SUPERJUNCTION STRUCTURES FOR POWER DEVICES AND METHODS OF MANUFACTURE |
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