METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINABLE THEREWITH

A method of manufacturing a semiconductor device on a substrate (4). The method includes forming a non-volatile memory (10) in a memory area (1) of the substrate (4). The forming non-volatile memory on a substrate (4) includes formation in the memory area (1) of a floating gate structure and of a control gate structure which, is in. a stacked configuration with the floating gate structure. One or more gate material layers are formed in a logic area (3) of the substrate (4). After forming the control gate structure and the gate material layer, a filling material layer (130, 130') is deposited over the logic area (3) and the memory area (1). The filling material layer (130,130') is partially removed by reducing the thickness of the filling material in the logic area (3) and the memory area (1), at least until a top surface of the one or more gate material layers is exposed. Logic devices are formed in the logic area (3), the formation includes forming a logic gate structure from the gate material layer.