NAND FLASH MEMORY OF USING COMMON P-WELL AND METHOD OF OPERATING THE SAME

PURPOSE: A NAND flash memory and an operation method thereof are provided to improve the operation speed of the NAND flash memory by executing a program due to a hot carrier injection and an erase operation. CONSTITUTION: A plurality of strings(200,210,220,230) are formed in a p-well region(240). Each string has a plurality of memory cells which are serially connected. The memory cells share the p-well region. The memory cells are selectively programmed by a program voltage which is supplied to a selected string. All memory cells constituting are erased by an erase voltage which is provided through a word line. The string comprises a string selection transistor, memory cells and a ground selection transistor.