SILICIDE FORMING METHOD AND SYSTEM THEREOF

This invention provides a method for forming a silicide, comprising supplying HF-derived radicals generated in a plasma generation chamber into a treatment chamber through introduction holes and supplying HF gas molecules as a treatment gas from around the radical introduction holes to suppress excitation energy and thus to enhance the selectivity for Si, whereby a natural oxide film present on the surface of a substrate of a group IV semiconductor doped with impurities of B, P, or As can be removed. In the method, despite dry treatment, surface treatment, which can realize good surface flatness comparable with that attained by wet washing which requires high-temperature treatment, can be realized. A film of a metallic material is formed on the substrate after the surface treatment, and the assembly is heat treated for metal silicide formation. These steps are carried out without exposure of the substrate to the air, and good contact resistance favorably comparable with that attained by the wet treatment can be provided. Further, the adsorption of impurities on the interface can be suppressed. For MOS-FET, good device characteristic can be realized.