METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE

METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE

PURPOSE: A method of forming an isolation layer in a semiconductor device is provided to form an element isolation film without a defective by forming an low element isolation film and forming it to be final height again. CONSTITUTION: In a device, a trench is formed in an element isolation region o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SONG, PIL GEUN, MYUNG, SEONG HWAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SONG, PIL GEUN
MYUNG, SEONG HWAN
description PURPOSE: A method of forming an isolation layer in a semiconductor device is provided to form an element isolation film without a defective by forming an low element isolation film and forming it to be final height again. CONSTITUTION: In a device, a trench is formed in an element isolation region of a semiconductor substrate(102). A tunnel insulating film(104), a first conductive film(106), and a first hard mask film are formed in an active area of the semiconductor substrate. The trench is filled with the first insulating film(112), and the first insulating film is left on the trench through a first planarization process. A second conductive film(114) and a second hard mask film(116) are formed on the first conductive film and the first insulating film. The second insulating film(118) is formed between the second hard mask film and the second conductive film.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20100001659A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20100001659A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20100001659A3</originalsourceid><addsrcrecordid>eNrjZLD2dQ3x8HdR8HdTcPMP8vX0c1dwVPAM9vdxDPH091PwcYx0DVLw9FMIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhgZAYGhmauloTJwqAGcZKew</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>SONG, PIL GEUN ; MYUNG, SEONG HWAN</creator><creatorcontrib>SONG, PIL GEUN ; MYUNG, SEONG HWAN</creatorcontrib><description>PURPOSE: A method of forming an isolation layer in a semiconductor device is provided to form an element isolation film without a defective by forming an low element isolation film and forming it to be final height again. CONSTITUTION: In a device, a trench is formed in an element isolation region of a semiconductor substrate(102). A tunnel insulating film(104), a first conductive film(106), and a first hard mask film are formed in an active area of the semiconductor substrate. The trench is filled with the first insulating film(112), and the first insulating film is left on the trench through a first planarization process. A second conductive film(114) and a second hard mask film(116) are formed on the first conductive film and the first insulating film. The second insulating film(118) is formed between the second hard mask film and the second conductive film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100106&amp;DB=EPODOC&amp;CC=KR&amp;NR=20100001659A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20100106&amp;DB=EPODOC&amp;CC=KR&amp;NR=20100001659A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONG, PIL GEUN</creatorcontrib><creatorcontrib>MYUNG, SEONG HWAN</creatorcontrib><title>METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE</title><description>PURPOSE: A method of forming an isolation layer in a semiconductor device is provided to form an element isolation film without a defective by forming an low element isolation film and forming it to be final height again. CONSTITUTION: In a device, a trench is formed in an element isolation region of a semiconductor substrate(102). A tunnel insulating film(104), a first conductive film(106), and a first hard mask film are formed in an active area of the semiconductor substrate. The trench is filled with the first insulating film(112), and the first insulating film is left on the trench through a first planarization process. A second conductive film(114) and a second hard mask film(116) are formed on the first conductive film and the first insulating film. The second insulating film(118) is formed between the second hard mask film and the second conductive film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD2dQ3x8HdR8HdTcPMP8vX0c1dwVPAM9vdxDPH091PwcYx0DVLw9FMIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGhgZAYGhmauloTJwqAGcZKew</recordid><startdate>20100106</startdate><enddate>20100106</enddate><creator>SONG, PIL GEUN</creator><creator>MYUNG, SEONG HWAN</creator><scope>EVB</scope></search><sort><creationdate>20100106</creationdate><title>METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE</title><author>SONG, PIL GEUN ; MYUNG, SEONG HWAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20100001659A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SONG, PIL GEUN</creatorcontrib><creatorcontrib>MYUNG, SEONG HWAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SONG, PIL GEUN</au><au>MYUNG, SEONG HWAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE</title><date>2010-01-06</date><risdate>2010</risdate><abstract>PURPOSE: A method of forming an isolation layer in a semiconductor device is provided to form an element isolation film without a defective by forming an low element isolation film and forming it to be final height again. CONSTITUTION: In a device, a trench is formed in an element isolation region of a semiconductor substrate(102). A tunnel insulating film(104), a first conductive film(106), and a first hard mask film are formed in an active area of the semiconductor substrate. The trench is filled with the first insulating film(112), and the first insulating film is left on the trench through a first planarization process. A second conductive film(114) and a second hard mask film(116) are formed on the first conductive film and the first insulating film. The second insulating film(118) is formed between the second hard mask film and the second conductive film.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_KR20100001659A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF FORMING A ISOLATION LAYER IN SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T02%3A57%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SONG,%20PIL%20GEUN&rft.date=2010-01-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20100001659A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true