PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES

A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coate...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: RUETHER PATRICIA ANN, WAGENER THOMAS J, HANESTAD RONALD J, CHRISTENSON KURT KARL
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator RUETHER PATRICIA ANN
WAGENER THOMAS J
HANESTAD RONALD J
CHRISTENSON KURT KARL
description A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 9O°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 9O°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20090130197A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20090130197A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20090130197A3</originalsourceid><addsrcrecordid>eNrjZNANCPJ3dg0OVnDzD1IIcvX1D_P0c1fwdQxxDfJ09FFwC_L3VQgOdQoOCQIKBfMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDA0sDQ2MDQ0tzR2PiVAEAbJMmkA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES</title><source>esp@cenet</source><creator>RUETHER PATRICIA ANN ; WAGENER THOMAS J ; HANESTAD RONALD J ; CHRISTENSON KURT KARL</creator><creatorcontrib>RUETHER PATRICIA ANN ; WAGENER THOMAS J ; HANESTAD RONALD J ; CHRISTENSON KURT KARL</creatorcontrib><description>A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 9O°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 9O°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ; ATOMISING APPARATUS ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; CLEANING ; CLEANING IN GENERAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; NOZZLES ; ORIGINALS THEREFOR ; PERFORMING OPERATIONS ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; SPRAYING APPARATUS ; SPRAYING OR ATOMISING IN GENERAL ; TRANSPORTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091218&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090130197A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20091218&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090130197A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUETHER PATRICIA ANN</creatorcontrib><creatorcontrib>WAGENER THOMAS J</creatorcontrib><creatorcontrib>HANESTAD RONALD J</creatorcontrib><creatorcontrib>CHRISTENSON KURT KARL</creatorcontrib><title>PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES</title><description>A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 9O°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 9O°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</subject><subject>ATOMISING APPARATUS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>NOZZLES</subject><subject>ORIGINALS THEREFOR</subject><subject>PERFORMING OPERATIONS</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SPRAYING APPARATUS</subject><subject>SPRAYING OR ATOMISING IN GENERAL</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNANCPJ3dg0OVnDzD1IIcvX1D_P0c1fwdQxxDfJ09FFwC_L3VQgOdQoOCQIKBfMwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUknjvICMDA0sDQ2MDQ0tzR2PiVAEAbJMmkA</recordid><startdate>20091218</startdate><enddate>20091218</enddate><creator>RUETHER PATRICIA ANN</creator><creator>WAGENER THOMAS J</creator><creator>HANESTAD RONALD J</creator><creator>CHRISTENSON KURT KARL</creator><scope>EVB</scope></search><sort><creationdate>20091218</creationdate><title>PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES</title><author>RUETHER PATRICIA ANN ; WAGENER THOMAS J ; HANESTAD RONALD J ; CHRISTENSON KURT KARL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20090130197A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL</topic><topic>ATOMISING APPARATUS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>NOZZLES</topic><topic>ORIGINALS THEREFOR</topic><topic>PERFORMING OPERATIONS</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SPRAYING APPARATUS</topic><topic>SPRAYING OR ATOMISING IN GENERAL</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>RUETHER PATRICIA ANN</creatorcontrib><creatorcontrib>WAGENER THOMAS J</creatorcontrib><creatorcontrib>HANESTAD RONALD J</creatorcontrib><creatorcontrib>CHRISTENSON KURT KARL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RUETHER PATRICIA ANN</au><au>WAGENER THOMAS J</au><au>HANESTAD RONALD J</au><au>CHRISTENSON KURT KARL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES</title><date>2009-12-18</date><risdate>2009</risdate><abstract>A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 9O°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 9O°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_KR20090130197A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
ATOMISING APPARATUS
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
NOZZLES
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
SPRAYING APPARATUS
SPRAYING OR ATOMISING IN GENERAL
TRANSPORTING
title PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T01%3A20%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RUETHER%20PATRICIA%20ANN&rft.date=2009-12-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20090130197A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true