ESD PROTECTION DEVICE HAVING A STACK TYPE SCR WITH HIGH HOLDING VOLTAGE
An ESD protection device having a stack type SCR with high holding voltage is provided to increase the holding voltage while increasing the trigger voltage by forming the double spread structure. The semiconductor substrate(100) of the first conductivity type comprises the active region. The first w...
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creator | KANG, TAEG HYUN KIM, MOON HO RYU, JUN HYEONG |
description | An ESD protection device having a stack type SCR with high holding voltage is provided to increase the holding voltage while increasing the trigger voltage by forming the double spread structure. The semiconductor substrate(100) of the first conductivity type comprises the active region. The first well(141) and the second well(143) of the second conductive type are separated from each other within the active region of the semiconductor substrate. The third well(145) and fourth well(147) of the first conductivity type are separated from each other within the active region of the semiconductor substrate. |
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The semiconductor substrate(100) of the first conductivity type comprises the active region. The first well(141) and the second well(143) of the second conductive type are separated from each other within the active region of the semiconductor substrate. The third well(145) and fourth well(147) of the first conductivity type are separated from each other within the active region of the semiconductor substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090917&DB=EPODOC&CC=KR&NR=20090098237A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090917&DB=EPODOC&CC=KR&NR=20090098237A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KANG, TAEG HYUN</creatorcontrib><creatorcontrib>KIM, MOON HO</creatorcontrib><creatorcontrib>RYU, JUN HYEONG</creatorcontrib><title>ESD PROTECTION DEVICE HAVING A STACK TYPE SCR WITH HIGH HOLDING VOLTAGE</title><description>An ESD protection device having a stack type SCR with high holding voltage is provided to increase the holding voltage while increasing the trigger voltage by forming the double spread structure. The semiconductor substrate(100) of the first conductivity type comprises the active region. The first well(141) and the second well(143) of the second conductive type are separated from each other within the active region of the semiconductor substrate. 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The semiconductor substrate(100) of the first conductivity type comprises the active region. The first well(141) and the second well(143) of the second conductive type are separated from each other within the active region of the semiconductor substrate. The third well(145) and fourth well(147) of the first conductivity type are separated from each other within the active region of the semiconductor substrate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | ESD PROTECTION DEVICE HAVING A STACK TYPE SCR WITH HIGH HOLDING VOLTAGE |
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