DOPING WITH ALD TECHNOLOGY

DOPING WITH ALD TECHNOLOGY

A doping method using the atomic layer deposition technology is provided to control concentration and uniformity of the evaporated dopant by the shield reactant. The sub - monolayer of dopant is deposited on the first film of the substrate(110). The shield reactant is pulsed within the reaction spac...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: WANG CHANG GONG, SHERO ERIC
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A doping method using the atomic layer deposition technology is provided to control concentration and uniformity of the evaporated dopant by the shield reactant. The sub - monolayer of dopant is deposited on the first film of the substrate(110). The shield reactant is pulsed within the reaction space(120). The excess shield water is removed from the reaction space(130). The dopant precursor is pulsed in the reaction space(140). The excess dopant precursor is removed(150). The pulse of the third reactant is injected in the reaction space(160).