METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

METHOD OF FORMING PATTERN OF SEMICONDUCTOR DEVICE

A pattern formation method of a semiconductor device, and to a manufacturing method of a flash memory, in which spacer patterning technology is performed while two hard mask layers having a different etching characteristics are used, such that the patterning can be performed by using only a spacer a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: JEONG, JOO HONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A pattern formation method of a semiconductor device, and to a manufacturing method of a flash memory, in which spacer patterning technology is performed while two hard mask layers having a different etching characteristics are used, such that the patterning can be performed by using only a spacer as a mask in the region which requires a small pattern. Additionally, the patterning can be performed by using a hard mask layer pattern and the spacer as a mask in a region which requires a large pattern. Therefore, the pattern formation method of the invention can be used to form a semiconductor device with patterns having various sizes using just a single patterning.