METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF LARGE SIZE WAFER WITH CAPABILITY OF POLISHING INDIVIDUAL DIE
A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2...
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| creator | QIN QINGJUN BURKHARD CRAIG LI YUZHUO |
| description | A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2'' and as large as 18''. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level. |
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The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2'' and as large as 18''. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090312&DB=EPODOC&CC=KR&NR=20090026266A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20090312&DB=EPODOC&CC=KR&NR=20090026266A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>QIN QINGJUN</creatorcontrib><creatorcontrib>BURKHARD CRAIG</creatorcontrib><creatorcontrib>LI YUZHUO</creatorcontrib><title>METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF LARGE SIZE WAFER WITH CAPABILITY OF POLISHING INDIVIDUAL DIE</title><description>A novel polisher for chemical mechanical planarization process is described. 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The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2'' and as large as 18''. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF LARGE SIZE WAFER WITH CAPABILITY OF POLISHING INDIVIDUAL DIE |
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