RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF

RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF

An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: PRYOR ROBERT A, DRAGON CHRISTOPHER P, BURGER WAYNE R
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator PRYOR ROBERT A
DRAGON CHRISTOPHER P
BURGER WAYNE R
description An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20090003198A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20090003198A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20090003198A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAuDqL-w4GzEO1ix5BcmsM2KZejHUuROIkW6v-jgh_g9Ja3Ljp20MUBGYR1SJQkMljsySAMJB5aFN0ANmiEY0s1a6EYPiVRHUAH-x0-WhCPjNFti9Vtui9593NT7B2K8Yc8P8e8zNM1P_JrvPBJqUopVR6rsy7_W29B3TAD</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF</title><source>esp@cenet</source><creator>PRYOR ROBERT A ; DRAGON CHRISTOPHER P ; BURGER WAYNE R</creator><creatorcontrib>PRYOR ROBERT A ; DRAGON CHRISTOPHER P ; BURGER WAYNE R</creatorcontrib><description>An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090109&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090003198A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090109&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090003198A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PRYOR ROBERT A</creatorcontrib><creatorcontrib>DRAGON CHRISTOPHER P</creatorcontrib><creatorcontrib>BURGER WAYNE R</creatorcontrib><title>RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF</title><description>An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAuDqL-w4GzEO1ix5BcmsM2KZejHUuROIkW6v-jgh_g9Ja3Ljp20MUBGYR1SJQkMljsySAMJB5aFN0ANmiEY0s1a6EYPiVRHUAH-x0-WhCPjNFti9Vtui9593NT7B2K8Yc8P8e8zNM1P_JrvPBJqUopVR6rsy7_W29B3TAD</recordid><startdate>20090109</startdate><enddate>20090109</enddate><creator>PRYOR ROBERT A</creator><creator>DRAGON CHRISTOPHER P</creator><creator>BURGER WAYNE R</creator><scope>EVB</scope></search><sort><creationdate>20090109</creationdate><title>RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF</title><author>PRYOR ROBERT A ; DRAGON CHRISTOPHER P ; BURGER WAYNE R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20090003198A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PRYOR ROBERT A</creatorcontrib><creatorcontrib>DRAGON CHRISTOPHER P</creatorcontrib><creatorcontrib>BURGER WAYNE R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PRYOR ROBERT A</au><au>DRAGON CHRISTOPHER P</au><au>BURGER WAYNE R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF</title><date>2009-01-09</date><risdate>2009</risdate><abstract>An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_KR20090003198A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RF POWER TRANSISTOR DEVICE WITH METAL ELECTROMIGRATION DESIGN AND METHOD THEREOF
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T20%3A21%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PRYOR%20ROBERT%20A&rft.date=2009-01-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EKR20090003198A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true