A NONVOLATILE MEMORY DEVICE

A NONVOLATILE MEMORY DEVICE

A nonvolatile memory device is provided to minimize influence due to the external characteristic by directly supplying the double test voltage to the bit line. In a nonvolatile memory device, a bit line selection part(410) selects one out of the bit line(BLE, BLO) in response to the bit line select...

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1. Verfasser: KIM, BYONG KOOK
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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description A nonvolatile memory device is provided to minimize influence due to the external characteristic by directly supplying the double test voltage to the bit line. In a nonvolatile memory device, a bit line selection part(410) selects one out of the bit line(BLE, BLO) in response to the bit line select signal(BSLE, BSLO) and discharge signal(DISCHE, DISCHO). The selected bit line connects the bit line selection part to the data transmission part(420). The bit line selection part discharges the bit line, and the data transmission part connects the bit line selection part and sensing node(SO) in response to data sensing signal(PBSENSE). A bit register(430) comprises data transmission part(431), data latch(432), and data sensing part(433). The low bit register(440) comprises a data transmission part, a data latch(442), and the data sensing part(443). The bit line precharge unit(450) precharges the sensing node to the power supply voltage(VCC) for the precharge period.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20090002621A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20090002621A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20090002621A3</originalsourceid><addsrcrecordid>eNrjZJB2VPDz9wvz93EM8fRxVfB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBgaWBgYGRmZGho7GxKkCAMplIT8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>A NONVOLATILE MEMORY DEVICE</title><source>esp@cenet</source><creator>KIM, BYONG KOOK</creator><creatorcontrib>KIM, BYONG KOOK</creatorcontrib><description>A nonvolatile memory device is provided to minimize influence due to the external characteristic by directly supplying the double test voltage to the bit line. In a nonvolatile memory device, a bit line selection part(410) selects one out of the bit line(BLE, BLO) in response to the bit line select signal(BSLE, BSLO) and discharge signal(DISCHE, DISCHO). The selected bit line connects the bit line selection part to the data transmission part(420). The bit line selection part discharges the bit line, and the data transmission part connects the bit line selection part and sensing node(SO) in response to data sensing signal(PBSENSE). A bit register(430) comprises data transmission part(431), data latch(432), and data sensing part(433). The low bit register(440) comprises a data transmission part, a data latch(442), and the data sensing part(443). The bit line precharge unit(450) precharges the sensing node to the power supply voltage(VCC) for the precharge period.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2009</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090109&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090002621A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20090109&amp;DB=EPODOC&amp;CC=KR&amp;NR=20090002621A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM, BYONG KOOK</creatorcontrib><title>A NONVOLATILE MEMORY DEVICE</title><description>A nonvolatile memory device is provided to minimize influence due to the external characteristic by directly supplying the double test voltage to the bit line. In a nonvolatile memory device, a bit line selection part(410) selects one out of the bit line(BLE, BLO) in response to the bit line select signal(BSLE, BSLO) and discharge signal(DISCHE, DISCHO). The selected bit line connects the bit line selection part to the data transmission part(420). The bit line selection part discharges the bit line, and the data transmission part connects the bit line selection part and sensing node(SO) in response to data sensing signal(PBSENSE). A bit register(430) comprises data transmission part(431), data latch(432), and data sensing part(433). The low bit register(440) comprises a data transmission part, a data latch(442), and the data sensing part(443). The bit line precharge unit(450) precharges the sensing node to the power supply voltage(VCC) for the precharge period.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2009</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJB2VPDz9wvz93EM8fRxVfB19fUPilRwcQ3zdHblYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBgaWBgYGRmZGho7GxKkCAMplIT8</recordid><startdate>20090109</startdate><enddate>20090109</enddate><creator>KIM, BYONG KOOK</creator><scope>EVB</scope></search><sort><creationdate>20090109</creationdate><title>A NONVOLATILE MEMORY DEVICE</title><author>KIM, BYONG KOOK</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20090002621A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2009</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM, BYONG KOOK</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM, BYONG KOOK</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>A NONVOLATILE MEMORY DEVICE</title><date>2009-01-09</date><risdate>2009</risdate><abstract>A nonvolatile memory device is provided to minimize influence due to the external characteristic by directly supplying the double test voltage to the bit line. In a nonvolatile memory device, a bit line selection part(410) selects one out of the bit line(BLE, BLO) in response to the bit line select signal(BSLE, BSLO) and discharge signal(DISCHE, DISCHO). The selected bit line connects the bit line selection part to the data transmission part(420). The bit line selection part discharges the bit line, and the data transmission part connects the bit line selection part and sensing node(SO) in response to data sensing signal(PBSENSE). A bit register(430) comprises data transmission part(431), data latch(432), and data sensing part(433). The low bit register(440) comprises a data transmission part, a data latch(442), and the data sensing part(443). The bit line precharge unit(450) precharges the sensing node to the power supply voltage(VCC) for the precharge period.</abstract><oa>free_for_read</oa></addata></record>
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PHYSICS
STATIC STORES
title A NONVOLATILE MEMORY DEVICE
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