IN SITU SILICON AND TITANIUM NITRIDE DEPOSITION

Problems generated between adjacent TiN and silicon layers can be solved although the thermal expansion and shrinkage of the silicon and TiN are different because the range of the deposition temperature of TiN and silicon layers is relatively narrow. The method of processing the semiconductor wafer...

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1. Verfasser:	HASPER ALBERT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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