SEMICONDUCTOR DEVICE FOR COMMON SOURCE LINE AND METHOD OF FABRICATION THE SAME

A semiconductor device for a common source line and a manufacturing method thereof are provided to prevent an active region of a semiconductor substrate from being recessed by forming a spacer without performing an etching process. A semiconductor device for a common source line(CSL) includes a semiconductor substrate(100), plural ground select lines(GSL), plural word lines(WL), and a spacer insulation film(103). The ground select lines are separated from the word lines. The ground select lines and the word lines are opposed to each other. The spacer insulation film covers plural ground select lines and the word lines. The spacer insulation film covers the semiconductor substrate between the ground select lines at a uniform thickness. An etching stopper film(104) is formed on the spacer insulation film.