SEMICONDUCTOR MANUFACTURING APPARATUS AND HEATER THEREOF
An apparatus for manufacturing a semiconductor and a heater of the same are provided to prevent the arcing and fail at a position adjacent to a lower electrode and a ground line by using an insulator having a sub-insulating unit. A heater block(161) has a heating body(161a) and a lower electrode(120...
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| creator | SHIM, KYOUNG MAN PARK, YOO CHOON YANG, YUN SIK KIM, HAG PIL |
| description | An apparatus for manufacturing a semiconductor and a heater of the same are provided to prevent the arcing and fail at a position adjacent to a lower electrode and a ground line by using an insulator having a sub-insulating unit. A heater block(161) has a heating body(161a) and a lower electrode(120). A plurality of heater power supply lines(162) are electrically connected to the heating body. A ground line has a first portion inputted into the lower electrode of the heater block and electrically connected to the heater block, and a second portion being extended from the first portion to the outside of the lower electrode. An insulator has a main insulating unit for surrounding the second portion of the ground line and a sub-insulating unit for surrounding the first portion of the ground line. The main insulating unit of the insulator is located between the ground line and the heater power supply line, and the sub-insulating unit of the insulator is located between the ground line and the lower electrode. |
| format | Patent |
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A heater block(161) has a heating body(161a) and a lower electrode(120). A plurality of heater power supply lines(162) are electrically connected to the heating body. A ground line has a first portion inputted into the lower electrode of the heater block and electrically connected to the heater block, and a second portion being extended from the first portion to the outside of the lower electrode. An insulator has a main insulating unit for surrounding the second portion of the ground line and a sub-insulating unit for surrounding the first portion of the ground line. The main insulating unit of the insulator is located between the ground line and the heater power supply line, and the sub-insulating unit of the insulator is located between the ground line and the lower electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080708&DB=EPODOC&CC=KR&NR=20080063938A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080708&DB=EPODOC&CC=KR&NR=20080063938A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIM, KYOUNG MAN</creatorcontrib><creatorcontrib>PARK, YOO CHOON</creatorcontrib><creatorcontrib>YANG, YUN SIK</creatorcontrib><creatorcontrib>KIM, HAG PIL</creatorcontrib><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND HEATER THEREOF</title><description>An apparatus for manufacturing a semiconductor and a heater of the same are provided to prevent the arcing and fail at a position adjacent to a lower electrode and a ground line by using an insulator having a sub-insulating unit. A heater block(161) has a heating body(161a) and a lower electrode(120). A plurality of heater power supply lines(162) are electrically connected to the heating body. A ground line has a first portion inputted into the lower electrode of the heater block and electrically connected to the heater block, and a second portion being extended from the first portion to the outside of the lower electrode. An insulator has a main insulating unit for surrounding the second portion of the ground line and a sub-insulating unit for surrounding the first portion of the ground line. The main insulating unit of the insulator is located between the ground line and the heater power supply line, and the sub-insulating unit of the insulator is located between the ground line and the lower electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNXcAwIcAxyDAkNVnD0c1HwcHUMcQ1SCPFwDXL1d-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHeQUYGBhYGBmbGlsYWjsbEqQIALIQppg</recordid><startdate>20080708</startdate><enddate>20080708</enddate><creator>SHIM, KYOUNG MAN</creator><creator>PARK, YOO CHOON</creator><creator>YANG, YUN SIK</creator><creator>KIM, HAG PIL</creator><scope>EVB</scope></search><sort><creationdate>20080708</creationdate><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND HEATER THEREOF</title><author>SHIM, KYOUNG MAN ; PARK, YOO CHOON ; YANG, YUN SIK ; KIM, HAG PIL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20080063938A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIM, KYOUNG MAN</creatorcontrib><creatorcontrib>PARK, YOO CHOON</creatorcontrib><creatorcontrib>YANG, YUN SIK</creatorcontrib><creatorcontrib>KIM, HAG PIL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIM, KYOUNG MAN</au><au>PARK, YOO CHOON</au><au>YANG, YUN SIK</au><au>KIM, HAG PIL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MANUFACTURING APPARATUS AND HEATER THEREOF</title><date>2008-07-08</date><risdate>2008</risdate><abstract>An apparatus for manufacturing a semiconductor and a heater of the same are provided to prevent the arcing and fail at a position adjacent to a lower electrode and a ground line by using an insulator having a sub-insulating unit. A heater block(161) has a heating body(161a) and a lower electrode(120). A plurality of heater power supply lines(162) are electrically connected to the heating body. A ground line has a first portion inputted into the lower electrode of the heater block and electrically connected to the heater block, and a second portion being extended from the first portion to the outside of the lower electrode. An insulator has a main insulating unit for surrounding the second portion of the ground line and a sub-insulating unit for surrounding the first portion of the ground line. The main insulating unit of the insulator is located between the ground line and the heater power supply line, and the sub-insulating unit of the insulator is located between the ground line and the lower electrode.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR MANUFACTURING APPARATUS AND HEATER THEREOF |
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