SALICIDE PROCESS USING CAPPING LAYER WITH DOUBLE LAYER STRUCTURE

A method for forming a salicide using a capping layer of a duplex structure is provided to prevent the malfunction of a semiconductor device by restricting current leakage such as GIDL in a high voltage gate structure by using a titanium nitride layer as the capping layer. In a salicide process for...

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Bibliographische Detailangaben

1. Verfasser:	LEE, KYEONG SIK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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