METHOD OF FABRICATING SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device is provided to improve the reliability of a transistor, without deterioration of performance, by forming a thin stress liner layer and a thick stress liner layer. A transistor comprising a gate structure and a conductive region(208) is formed on a subst...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARK, JAE EON, YANG, DAE WON, BAIOCCO CHRISTOPHER VINCENT, NAIR DELEEP R, CHEN XIANGDONG, KIM, JUN JUNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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