METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device is provided to improve the reliability of a transistor, without deterioration of performance, by forming a thin stress liner layer and a thick stress liner layer. A transistor comprising a gate structure and a conductive region(208) is formed on a subst...
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| creator | PARK, JAE EON YANG, DAE WON BAIOCCO CHRISTOPHER VINCENT NAIR DELEEP R CHEN XIANGDONG KIM, JUN JUNG |
| description | A method of fabricating a semiconductor device is provided to improve the reliability of a transistor, without deterioration of performance, by forming a thin stress liner layer and a thick stress liner layer. A transistor comprising a gate structure and a conductive region(208) is formed on a substrate(200), in which the gate structure is patterned, and a spacer(206) is formed on a side of the gate structure. Conductive regions are formed within the substrate on both sides of the gate structure. The transistor is applied by a first plasma having a first power level to form a first stress layer(210) on the transistor. The transistor is applied by a second plasma having a second power level to from a second stress layer(212) on the first stress layer, in which the second power level is higher than the first power level. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
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