DENSE CHEVRON FINFET AND METHOD OF MANUFACTURING SAME

A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material an...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NOWAK EDWARD J, BEINTNER JOCHEN, LUDWIG THOMAS
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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