METHOD OF FORMING A CONTACT

METHOD OF FORMING A CONTACT

A method for forming a contact is provided to restrain the degradation of a lower pattern due to heat and the generation of a void and a seam inside a metal layer by forming a barrier layer in a contact hole with a sputtering method. A first metal layer(102) including tungsten(W) is formed on a subs...

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Hauptverfasser: HONG, JONG WON, CHEONG, SEONG HWEE, LEE, JONG MYEONG, LEE, SANG WOO, YANG, SEUNG GIL
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HONG, JONG WON
CHEONG, SEONG HWEE
LEE, JONG MYEONG
LEE, SANG WOO
YANG, SEUNG GIL
description A method for forming a contact is provided to restrain the degradation of a lower pattern due to heat and the generation of a void and a seam inside a metal layer by forming a barrier layer in a contact hole with a sputtering method. A first metal layer(102) including tungsten(W) is formed on a substrate(100). An interlayer(104) is formed on the first metal layer. The interlayer dielectric has a contact hole for partially exposing the metal layer. A barrier layer(108) including tungsten nitride(WN) is formed on a sidewall of the contact hole by sputtering the exposed first metal layer under gas atmosphere containing nitrogen. A second metal layer(110) including tungsten is formed to gap-fill the contact hole on which the barrier layer is formed. The sputtering is performed with a plasma process using inert gas. The inert gas includes argon(Ar), nitrogen(N2), or helium(He). The barrier layer is formed under nitrogen or ammonia gas atmosphere.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF FORMING A CONTACT
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