SEMICONDUCTOR DEVICE WITH AN IMAGE SENSOR AND METHOD FOR THE MANUFACTURE OF SUCH A DEVICE

The invention relates to a semiconductor device with a semiconductor body (12) with an image sensor comprising a two-dimensional matrix of pixels (1) each comprising a radiation-sensitive element (2) with a charge accumulating semiconductor region (2A) and coupled to a number of MOS field effect transistors (3), in which in the semiconductor body (12) an isolation region (4) is sunken for the separation of neighboring pixels (1) underneath which a further semiconductor region (5) with an enlarged doping concentration is formed. According to the invention the further semiconductor region (5) is sunken in the surface of the semiconductor body (12) and wider than the isolation region (4). Preferably the isolation region (4) is merely located there where a radiation sensitive element (2) borders on the MOS transistors (3) of a neighboring pixel (1) and there where two neighboring pixels (1) border on each other with their radiation sensitive elements (2) another sunken semiconductor region (6) with an enlarged doping concentration is located. Such a device (10) has a low leakage current and a large radiation sensitivity and charge storage capacity.